MRF6V4300NR1_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V4300NR1_10 Datasheet
MRF6V4300NR1_10
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MRF6V4300NR1_10 Summary of contents
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... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: V ...
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Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Moisture ...
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B1 V BIAS + C12 RF INPUT C11 C16 C17 C18 Z1 0.900″ x 0.082″ Microstrip Z2 0.115″ x 0.170″ Microstrip Z3 0.260″ x 0.170″ Microstrip Z4 0.380″ x 0.170″ Microstrip ...
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C11 C16 C17 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 C12 C18 L3 C10 C13 C15 C20 C21 C22 C25 C26 C19 ...
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C iss C 100 oss Measured with ±30 mV(rms) MHz Vdc rss DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 4. Capacitance versus Drain- -Source Voltage 10 ...
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100 150 200 250 P , OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power 25 ...
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Figure 14. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 450 MHz Z source f = 450 MHz Z load Vdc 900 mA 300 ...
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MRF6V4300NR1 MRF6V4300NBR1 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 9 ...
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MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor ...
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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 11 ...
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MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor ...
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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 13 ...
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PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • ...
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How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...