MRF6V4300NR1_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V4300NR1_10 Datasheet

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MRF6V4300NR1_10

Manufacturer Part Number
MRF6V4300NR1_10
Description
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed primarily for CW large--signal output and driver applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
f = 450 MHz
Output Power
Operation
Power Gain — 22 dB
Drain Efficiency — 60%
MTTF calculators by product.
DD
(1,2)
= 50 Volts, I
Rating
DD
Operation
DQ
= 900 mA, P
out
= 300 Watts,
Symbol
V
V
T
T
DSS
T
GS
stg
C
J
CASE 1486- -03, STYLE 1
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V4300N
in
in
MRF6V4300NBR1
/V
/V
MRF6V4300NR1
MRF6V4300NR1 MRF6V4300NBR1
MRF6V4300NR1
TO- -270 WB- -4
Figure 1. Pin Connections
GS
GS
PARTS ARE SINGLE- -ENDED
10- -600 MHz, 300 W, 50 V
the source terminal for the transistor.
LATERAL N- -CHANNEL
PLASTIC
RF POWER MOSFETs
SINGLE- -ENDED
-- 65 to +150
BROADBAND
--0.5, +110
--6.0, +10
Value
CASE 1484- -04, STYLE 1
(Top View)
150
225
MRF6V4300NBR1
TO- -272 WB- -4
PLASTIC
Rev. 3, 4/2010
RF
RF
out
out
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DS
DS
1

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MRF6V4300NR1_10 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: V ...

Page 2

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Moisture ...

Page 3

B1 V BIAS + C12 RF INPUT C11 C16 C17 C18 Z1 0.900″ x 0.082″ Microstrip Z2 0.115″ x 0.170″ Microstrip Z3 0.260″ x 0.170″ Microstrip Z4 0.380″ x 0.170″ Microstrip ...

Page 4

C11 C16 C17 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 C12 C18 L3 C10 C13 C15 C20 C21 C22 C25 C26 C19 ...

Page 5

C iss C 100 oss Measured with ±30 mV(rms) MHz Vdc rss DRAIN--SOURCE VOLTAGE (VOLTS) DS Figure 4. Capacitance versus Drain- -Source Voltage 10 ...

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100 150 200 250 P , OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power 25 ...

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Figure 14. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 450 MHz Z source f = 450 MHz Z load Vdc 900 mA 300 ...

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MRF6V4300NR1 MRF6V4300NBR1 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 9 ...

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MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 11 ...

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MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 13 ...

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PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • ...

Page 15

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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