MRF6VP21KHR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP21KHR6_10 Datasheet

MRF6VP21KHR6_10

Manufacturer Part Number

MRF6VP21KHR6_10

Description

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6VP21KHR6_10.pdf (11 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

235 MHz. Device is unmatched and is suitable for use in industrial, medical

and scientific applications.

• Typical Pulsed Performance at 225 MHz: V

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• CW Operation Capability with Adequate Cooling

• Qualified Up to a Maximum of 50 V

• Integrated ESD Protection

• Designed for Push--Pull Operation

• Greater Negative Gate--Source Voltage Range for Improved Class C

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed primarily for pulsed wideband applications with frequencies up to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Duty Cycle = 20%

Power

Operation

Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

out

Power Gain — 24 dB

Drain Efficiency — 67.5%

calculators by product.

Select Documentation/Application Notes -- AN1955.

= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,

(1,2)

Characteristic

Rating

Operation

= 50 Volts, I

= 150 mA,

Symbol

DSS

θJC

stg

Document Number: MRF6VP21KH

inA

inB

MRF6VP21KHR6

10- -235 MHz, 1000 W, 50 V

GSA

GSB

Figure 1. Pin Connections

LATERAL N- -CHANNEL

CASE 375D- -05, STYLE 1

RF POWER MOSFET

PART IS PUSH- -PULL

-- 65 to +150

BROADBAND

--0.5, +110

Value

--6, +10

Value

0.03

(Top View)

150

225

NI- -1230

(2,3)

MRF6VP21KHR6

Rev. 4, 4/2010

2 RF

°C/W

outA

outB

Unit

Vdc

°C

DSA

DSB

Related parts for MRF6VP21KHR6_10

MRF6VP21KHR6_10 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. • ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Gate--Source Leakage Current ( Vdc ...

Page 3

BIAS + + + INPUT C12 T1 Z1 0.100″ x 0.082″ Microstrip Z2* 1.557″ x 0.082″ Microstrip Z3* 0.055″ x 0.082″ Microstrip Z4, Z5 0.133″ ...

Page 4

C10 C11 J1 L2 C12 * L4 is wrapped around R2. Figure 3. MRF6VP21KHR6 Test Circuit Component Layout MRF6VP21KHR6 4 T1 C23 L3 C19 C17 C18 C16 C15 ...

Page 5

C iss C oss 100 Measured with ±30 mV(rms) MHz Vdc GS C rss DRAIN--SOURCE VOLTAGE (VOLTS) DS Note: Each side of device measured separately. Figure ...

Page 6

T 60 25_C INPUT POWER (dBm) PULSED in Figure 10. Pulsed Output Power versus Input Power 0.2 0.18 0. 0.7 0.14 0. 0.5 0.1 0.08 ...

Page 7

Input Matching Network Figure 14. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 225 MHz Z source Ω 225 MHz Z load Vdc 150 ...

Page 8

MRF6VP21KHR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

RF Device Data Freescale Semiconductor MRF6VP21KHR6 9 ...

Page 10

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration ...

Page 11

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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