MRF6VP3450HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF6VP3450HR6_10 Datasheet

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MRF6VP3450HR6_10

Manufacturer Part Number
MRF6VP3450HR6_10
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB--T OFDM Performance: V
• Typical Broadband Two--Tone Performance: V
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
P
P
Operation
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
out
out
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — --29 dBc
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
MTTF calculators by product.
Bandwidth)
= 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
= 450 Watts PEP, f = 470--860 MHz
(1,2)
Rating
DD
Operation
DD
= 50 Volts, I
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
DD
= 50 Volts, I
DQ
= 1400 mA,
DQ
= 1400 mA,
Symbol
V
V
T
T
DSS
T
GS
stg
Document Number: MRF6VP3450H
RF
RF
C
MRF6VP3450HSR6(HSR5)
J
CASE 375D- -05, STYLE 1
CASE 375E- -04, STYLE 1
MRF6VP3450HR6(HR5)
inA
inB
MRF6VP3450HSR6
MRF6VP3450HSR5
MRF6VP3450HR6
MRF6VP3450HR5
/V
/V
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
PARTS ARE PUSH- -PULL
RF POWER MOSFETs
NI- -1230S
860 MHz, 450 W, 50 V
NI- -1230
3
4
-- 65 to +150
BROADBAND
--0.5, +110
--6.0, +10
Value
(Top View)
150
225
Rev. 4, 4/2010
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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MRF6VP3450HR6_10 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment. • ...

Page 2

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80° Case Temperature 44°C, 450 W CW Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle Table 3. ESD Protection Characteristics ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Pulsed Performances (In Freescale Broadband Test Fixture, 50 ohm system 470--860 MHz, 50 μsec Pulse Width, 2.5% Duty Cycle Power Gain Drain Efficiency Input Return Loss ...

Page 4

B1 V BIAS + R1 C24 C34 C44 Z10 RF Printed INPUT C1 Z1 Balun Input Z11 BIAS R2 C25 C35 C45 Printed Balun Output TOP BOTTOM Z44 ...

Page 5

Table 5. MRF6VP3450HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 Short Ferrite Beads C1 Chip Capacitors C3 6.8 pF Chip Capacitor Chip Capacitor C5, C6, C8, C9 6.8 pF Chip Capacitors C7, ...

Page 6

B1 R1 C24 C36 C34 C38 C44 C45 C35 B2 C25 C37 C39 R2 Figure 3. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Top Figure 3a. MRF6VP3450HR6(HSR6) Test Circuit Component Layout — Bottom MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 6 ...

Page 7

C iss C oss 100 Measured with ±30 mV(rms) MHz C rss Vdc DRAIN--SOURCE VOLTAGE (VOLTS) DS Note: Each side of device measured separately. Figure ...

Page 8

TYPICAL CHARACTERISTICS — TWO- -TONE -- Vdc 1400 mA 854 MHz 860 MHz, Two--Tone Measurements --30 --40 3rd Order --50 5th Order --60 7th Order --70 -- ...

Page 9

Mode DVB--T OFDM 64 QAM Data Carrier Modulation 0.01 5 Symbols 0.001 0.0001 PEAK--TO--AVERAGE (dB) Figure 14. Single- -Carrier DVB- -T OFDM 23 22 1400 21.5 ...

Page 10

TYPICAL CHARACTERISTICS — 470- -860 MHz 23 22.5 22 21.5 21 20.5 20 19.5 19 18 Figure 19. Broadband Pulsed Power Gain and Drain Efficiency versus Output Power — 470- -860 MHz ...

Page 11

TYPICAL CHARACTERISTICS — 470- -860 MHz QAM Data Carrier Modulation, 5 Symbols 16 470 500 530 560 590 620 650 680 710 740 770 800 830 Figure 22. Single- ...

Page 12

MHz Input Matching Network Figure 24. Series Equivalent Source and Load Impedance MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 Ω 860 MHz Z load f = 470 MHz Z source f = 470 ...

Page 13

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 13 ...

Page 14

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 14 RF Device Data Freescale Semiconductor ...

Page 15

RF Device Data Freescale Semiconductor MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 15 ...

Page 16

MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 16 RF Device Data Freescale Semiconductor ...

Page 17

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration ...

Page 18

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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