MRF7P20040HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF7P20040HR3_10 Datasheet

MRF7P20040HR3_10

Manufacturer Part Number

MRF7P20040HR3_10

Description

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7P20040HR3_10.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

2200 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

• Typical Doherty Single--Carrier W--CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW

• Typical P

Features

• Production Tested in a Symmetrical Doherty Configuration

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

• Designed for Digital Predistortion Error Correction Systems

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Table 2. Thermal Characteristics

Table 1. Maximum Ratings

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation @ T

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 1800 to

1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

2. Continuous use at maximum temperature will affect MTTF.

3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @

0.01% Probability

on CCDF.

Output Power (3 dB Input Overdrive from Rated P

and Common Source S--Parameters

Operation

For R5 Tape and Reel option, see p. 15.

DQA

Derate above 25°C

Case Temperature 78°C, 10 W CW, 32 Vdc, I

Case Temperature 82°C, 40 W CW

calculators by product.

Application Notes -- AN1955.

= 150 mA, V

Frequency

2025 MHz

out

@ 3 dB Compression Point ≃ 50 Watts CW

Rating

GSB

= 25°C

= 1.5 Vdc, P

(dB)

18.2

(2,3)

(1)

Characteristic

, 32 Vdc, I

out

42.6

(%)

= 10 Watts Avg., IQ Magnitude

DQA

Symbol

= 150 mA, V

Output PAR

DSS

= 150 mA, V

stg

(dB)

7.3

out

)

-- 65 to +150

GSB

--0.5, +65

--6.0, +10

(1)

32, +0

Value

GSB

42.4

0.17

150

225

= 1.5 Vdc, 2017.5 MHz

= 32 Volts,

ACPR

(dBc)

--34.8

= 1.5 Vdc, 2017.5 MHz

W/°C

Unit

Vdc

°C

(1)

Document Number: MRF7P20040H

MRF7P20040HR3 MRF7P20040HSR3

CASE 465H- -02, STYLE 1

2010- -2025 MHz, 10 W AVG., 32 V

CASE 465M- -01, STYLE 1

inA

inB

MRF7P20040HSR3

MRF7P20040HR3

Symbol

MRF7P20040HSR3

Figure 1. Pin Connections

GSA

MRF7P20040HR3

GSB

LATERAL N- -CHANNEL

θJC

RF POWER MOSFETs

NI- -780S- -4

NI- -780- -4

SINGLE W- -CDMA

(Top View)

Value

1.50

2.11

(3,4)

Rev. 2, 12/2010

2 RF

outA

outB

°C/W

Unit

DSA

DSB

Related parts for MRF7P20040HR3_10

MRF7P20040HR3_10 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: V ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc, ...

Page 3

V GGA C13 C14 V GGB Figure 2. MRF7P20040HR3(HSR3) Test Circuit Component Layout Table 5. MRF7P20040HR3(HSR3) Test Circuit Component Designations and Values Part C1, C2, C9, C10 12 pF Chip Capacitors C3, C4 2.4 pF ...

Page 4

MRF7P20040HR3 MRF7P20040HSR3 4 Single--ended λ λ Quadrature combined λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. RF Device Data Freescale Semiconductor ...

Page 5

Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) --10 --20 --30 --40 --50 -- 17.5 --1 17 --2 16.5 --3 16 --4 ...

Page 6

V 17 W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal 16.5 PAR = 9 0.01% 16 Probability on CCDF 15 Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain 20 ...

Page 7

Input Signal 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 9 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 9. ...

Page 8

Figure 11. Series Equivalent Source and Load Impedance — Carrier Side Figure 12. Series Equivalent Source and Load Impedance — Peaking Side MRF7P20040HR3 MRF7P20040HSR3 Vdc 150 mA 1.5 Vdc ...

Page 9

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Measurement made on the Class AB, carrier side of the device. RF Device Data Freescale Semiconductor Vdc, I ...

Page 10

Vdc 150 mA DD DQA (1) Max P out f Z source MHz Watts dBm Ω 1805 35 45.4 2.2 -- j9.3 1880 35 45.5 2.3 -- j11.3 1930 35 45.5 2.4 -- j13.0 2025 ...

Page 11

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7P20040HR3 MRF7P20040HSR3 11 ...

Page 12

MRF7P20040HR3 MRF7P20040HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MRF7P20040HR3 MRF7P20040HSR3 13 ...

Page 14

MRF7P20040HR3 MRF7P20040HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS ...

Page 16

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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