MRF7S19170HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF7S19170HR3_08 Datasheet

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MRF7S19170HR3_08

Manufacturer Part Number
MRF7S19170HR3_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1930 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Operation
Case Temperature 80°C, 170 W CW
Case Temperature 72°C, 25 W CW
out
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 170 Watts CW
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S19170H
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF7S19170HR3 MRF7S19170HSR3
1930 - 1990 MHz, 50 W AVG., 28 V
MRF7S19170HSR3
MRF7S19170HR3
MRF7S19170HSR3
MRF7S19170HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.25
0.31
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S19170HR3_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: V 1400 mA Watts Avg ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) V Video Bandwidth @ 170 W PEP P where IM3 = - 30 dBc out (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 ...

Page 4

R1 V BIAS INPUT Z1* 0.588″ x 0.083″ Microstrip Z2* 0.146″ x 0.083″ Microstrip Z3* 0.068″ x 0.083″ Microstrip Z4 0.865″ x 0.098″ Microstrip Z5 ...

Page 5

Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 C8 C15 C16 C10 C11 C14 C13 C12 C17 C18 C9 MRF7S19170H Rev 0 MRF7S19170HR3 MRF7S19170HSR3 5 ...

Page 6

G 16 η IRL 13 12 PARC 11 10 1880 Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ η IRL ...

Page 7

Vdc 1400 1955 MHz 1965 MHz −20 Two−Tone Measurements, 10 MHz Tone Spacing −30 −40 3rd Order −50 5th Order 7th Order −60 1 100 P , ...

Page 8

100 200 P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 100 10 1 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel ...

Page 9

MHz Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1880 MHz Z source f = 2040 MHz f = 1880 MHz V = ...

Page 10

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 P6dB = 54.33 dBm (271 P3dB = 53.97 dBm (249 P1dB = 53.25 dBm 55 (211 Vdc 1400 ...

Page 11

(FLANGE bbb bbb ccc (FLANGE (FLANGE bbb ...

Page 12

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 13

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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