MRF7S19170HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF7S19170HR3_08 Datasheet
MRF7S19170HR3_08
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MRF7S19170HR3_08 Summary of contents
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... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: V 1400 mA Watts Avg ...
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Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...
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Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) V Video Bandwidth @ 170 W PEP P where IM3 = - 30 dBc out (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 ...
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R1 V BIAS INPUT Z1* 0.588″ x 0.083″ Microstrip Z2* 0.146″ x 0.083″ Microstrip Z3* 0.068″ x 0.083″ Microstrip Z4 0.865″ x 0.098″ Microstrip Z5 ...
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Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C19 C8 C15 C16 C10 C11 C14 C13 C12 C17 C18 C9 MRF7S19170H Rev 0 MRF7S19170HR3 MRF7S19170HSR3 5 ...
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G 16 η IRL 13 12 PARC 11 10 1880 Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ η IRL ...
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Vdc 1400 1955 MHz 1965 MHz −20 Two−Tone Measurements, 10 MHz Tone Spacing −30 −40 3rd Order −50 5th Order 7th Order −60 1 100 P , ...
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100 200 P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 100 10 1 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel ...
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MHz Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1880 MHz Z source f = 2040 MHz f = 1880 MHz V = ...
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ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 P6dB = 54.33 dBm (271 P3dB = 53.97 dBm (249 P1dB = 53.25 dBm 55 (211 Vdc 1400 ...
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Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...
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How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...