MRF7S21170HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF7S21170HR3_08 Datasheet

MRF7S21170HR3_08

Manufacturer Part Number

MRF7S21170HR3_08

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7S21170HR3_08.pdf (13 pages)

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RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical Single - Carrier W - CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW

• P

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate - Source Voltage Range for Improved Class C

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Freescale Semiconductor

Technical Data

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 2110 to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

1400 mA, P

64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Output Power

Operation

Case Temperature 80°C, 170 W CW

Case Temperature 73°C, 25 W CW

out

Power Gain — 16 dB

Drain Efficiency — 31%

Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth

MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

@ 1 dB Compression Point w 170 Watts CW

out

= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,

(1,2)

Characteristic

Rating

= 28 Volts, I

Symbol

DSS

θJC

stg

Document Number: MRF7S21170H

CASE 465B - 03, STYLE 1

CASE 465C - 02, STYLE 1

MRF7S21170HR3 MRF7S21170HSR3

2110 - 2170 MHz, 50 W AVG., 28 V

MRF7S21170HSR3

MRF7S21170HR3

MRF7S21170HSR3

MRF7S21170HR3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 880

NI - 880S

SINGLE W - CDMA

- 65 to +150

Value

- 0.5, +65

- 6.0, +10

32, +0

Value

0.31

0.36

150

225

(2,3)

Rev. 5, 4/2008

°C/W

Unit

Vdc

°C

Related parts for MRF7S21170HR3_08

MRF7S21170HR3_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications applications. • ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) V Video Bandwidth @ 170 W PEP P where IM3 = - 30 dBc out (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 ...

Page 4

R1 V BIAS INPUT 0.250″ x 0.083″ Microstrip Z2* 0.090″ x 0.083″ Microstrip Z3* 0.842″ x 0.083″ Microstrip Z4* 0.379″ x 0.083″ Microstrip Z5* 0.307″ x 0.083″ Microstrip Z6 ...

Page 5

Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...

Page 6

η IRL 12 11 PARC 10 9 2060 Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ η ...

Page 7

Vdc 1400 2135 MHz 2145 MHz −20 Two−Tone Measurements, 10 MHz Tone Spacing −30 −40 3rd Order −50 5th Order 7th Order − ...

Page 8

100 P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 100 10 1 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ...

Page 9

Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω 2220 MHz Z load f = 2060 MHz f = 2220 MHz Vdc 1400 mA, ...

Page 10

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 60 P6dB = 53.89 dBm (244 P3dB = 53.56 dBm (226 P1dB = 52.75 dBm (188 Vdc 1400 ...

Page 11

(FLANGE bbb (INSULATOR) bbb (LID) ccc (FLANGE ...

Page 12

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 13

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 480 ...

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