MRF7S21170HR3_11 FREESCALE [Freescale Semiconductor, Inc], MRF7S21170HR3_11 Datasheet

MRF7S21170HR3_11

Manufacturer Part Number

MRF7S21170HR3_11

Description

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7S21170HR3_11.pdf (17 pages)

Current page: 1 of 17
Download datasheet (803Kb)

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

u s e d i n C l a s s A B a n d C l a s s C f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical Single--Carrier W--CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW

• P

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Freescale Semiconductor

Technical Data

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain--Source Voltage

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 2110 to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

1400 mA, P

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Output Power

Operation

Case Temperature 80°C, 170 W CW

Case Temperature 73°C, 25 W CW

out

Power Gain — 16 dB

Drain Efficiency — 31%

Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes -- AN1955.

@ 1 dB Compression Point ≃ 170 Watts CW

out

= 50 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,

(1,2)

Characteristic

Rating

= 28 Volts, I

Symbol

DSS

θJC

stg

Document Number: MRF7S21170H

CASE 465B- -03, STYLE 1

CASE 465C- -02, STYLE 1

MRF7S21170HR3 MRF7S21170HSR3

2110- -2170 MHz, 50 W AVG., 28 V

MRF7S21170HSR3

MRF7S21170HR3

MRF7S21170HSR3

MRF7S21170HR3

LATERAL N- -CHANNEL

RF POWER MOSFETs

NI- -880

NI- -880S

SINGLE W- -CDMA

-- 65 to +150

Value

--0.5, +65

--6.0, +10

32, +0

Value

0.31

0.36

150

225

(2,3)

Rev. 6, 3/2011

°C/W

Unit

Vdc

°C

Related parts for MRF7S21170HR3_11

MRF7S21170HR3_11 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications applications. • ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc, V ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) V Video Bandwidth @ 170 W PEP P where IM3 = --30 dBc out (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ ...

Page 4

R1 V BIAS INPUT 0.250″ x 0.083″ Microstrip Z2* 0.090″ x 0.083″ Microstrip Z3* 0.842″ x 0.083″ Microstrip Z4* 0.379″ x 0.083″ Microstrip Z5* 0.307″ x 0.083″ Microstrip Z6 ...

Page 5

Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C8 C10 C12 C17 C14 C15 C16 C18 C9 C11 C7 MRF7S21170H Rev 0 MRF7S21170HR3 MRF7S21170HSR3 5 ...

Page 6

η IRL 12 11 PARC 10 9 2060 Figure 3. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ η IRL ...

Page 7

Vdc 1400 2135 MHz 2145 MHz --20 Two--Tone Measurements, 10 MHz Tone Spacing --30 --40 3rd Order --50 5th Order 7th Order -- ...

Page 8

Input Signal 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 0 1 ...

Page 9

Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Ω 2220 MHz Z load f = 2060 MHz f = 2220 MHz Vdc 1400 mA, ...

Page 10

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 61 60 P6dB = 53.89 dBm (244 P3dB = 53.56 dBm (226 P1dB = 52.75 dBm (188 Vdc 1400 ...

Page 11

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S21170HR3 MRF7S21170HSR3 11 ...

Page 12

MRF7S21170HR3 MRF7S21170HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MRF7S21170HR3 MRF7S21170HSR3 13 ...

Page 14

MRF7S21170HR3 MRF7S21170HSR3 14 RF Device Data Freescale Semiconductor ...

Page 15

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software ...

Page 16

Revision Date 5 Apr. 2008 • Corrected On Characteristics table I 2.7 Adc to 3.72 Adc; tightened V test values • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. ...

Page 17

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

Related keywords

MRF7S21170HR3_11 datasheet
MRF7S21170HR3_11 data sheet
MRF7S21170HR3_11 pdf datasheet
MRF7S21170HR3_11 component
MRF7S21170HR3_11 part
MRF7S21170HR3_11 distributor
MRF7S21170HR3_11 RoHS
MRF7S21170HR3_11 datasheet download