MRF7S27130HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF7S27130HR3_08 Datasheet

MRF7S27130HR3_08

Manufacturer Part Number

MRF7S27130HR3_08

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7S27130HR3_08.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class

AB and Class C amplifier applications.

• Typical WiMAX Performance: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate - Source Voltage Range for Improved Class C

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation @ T

Thermal Resistance, Junction to Case

Designed for WiMAX base station applications with frequencies up to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%

Probability on CCDF.

Output Power

Operation

Derate above 25°C

Case Temperature 80°C, 104 W CW

Case Temperature 69°C, 23 W CW

out

Power Gain — 16.5 dB

Drain Efficiency — 20%

Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF

ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

= 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM

= 25°C

(1,2)

Characteristic

Rating

= 28 Volts, I

= 1500 mA,

Symbol

θJC

stg

Document Number: MRF7S27130H

CASE 465- 06, STYLE 1

CASE 465A - 06, STYLE 1

MRF7S27130HR3 MRF7S27130HSR3

2500 - 2700 MHz, 23 W AVG., 28 V

MRF7S27130HSR3

MRF7S27130HR3

MRF7S27130HSR3

MRF7S27130HR3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780

NI - 780S

- 65 to +150

Value

- 0.5, +65

- 6.0, +10

32, +0

Value

0.83

0.32

0.36

150

225

150

WiMAX

(2,3)

Rev. 1, 12/2008

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF7S27130HR3_08

MRF7S27130HR3_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: V ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 0.01% ...

Page 4

BIAS INPUT 0.320″ x 0.084″ Microstrip Z2 0.380″ x 0.240″ Microstrip Z3 0.046″ x 0.084″ Microstrip Z4 0.273″ x 0.084″ Microstrip Z5 0.360″ x 0.600″ Microstrip Z6 ...

Page 5

Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C12 C13 C11 C9 C5 C10 MRF7S27130H/HS Rev. 0 MRF7S27130HR3 MRF7S27130HSR3 5 ...

Page 6

Figure 3. WiMAX Broadband Performance @ P 17.7 17.6 17.5 17.4 17.3 17.2 17.1 17 16.9 16.8 16.7 2500 Figure 4. WiMAX Broadband Performance @ ...

Page 7

Vdc 1500 2595 MHz 2605 MHz −30 Two−Tone Measurements, 10 MHz Tone Spacing −40 3rd Order −50 5th Order −60 7th Order −70 − ...

Page 8

This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators ...

Page 9

Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 5 Ω source f = 2500 MHz f = 2700 MHz Vdc 1500 mA ...

Page 10

(FLANGE) D bbb (LID (FLANGE (FLANGE (LID (FLANGE) D bbb ...

Page 11

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 12

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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