MRF857 MOTOROLA [Motorola, Inc], MRF857 Datasheet

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MRF857

Manufacturer Part Number
MRF857
Description
NPN SILICON RF POWER TRANSISTOR
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF857S
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
REV 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T C = 50 C
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance (T J = 150 C, T C = 50 C)
Collector–Emitter Breakdown Voltage (I C = 20 mA, I B = 0)
Collector–Emitter Breakdown Voltage (I C = 20 mA, V BE = 0)
Collector–Base Breakdown Voltage (I C = 20 mA, I E = 0)
Emitter–Base Breakdown Voltage (I E = 1 mA, I C = 0)
Collector Cutoff Current (V CB = 24 V, I E = 0)
Designed for 24 Volt UHF large–signal, common emitter, class A linear
Motorola, Inc. 1997
Specified for V CE = 24 Vdc, I C = 0.3 Adc Characteristics
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 – 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, I C = 0.3 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 0.4 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Derate above 50 C
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = + 43 dBm
Typical Noise Figure = 5.25 dB
Characteristic
Characteristic
Rating
V (BR)CEO
V (BR)CBO
V (BR)EBO
V (BR)CES
Symbol
I CES
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
Min
P D
T J
28
55
55
4
Typ
35
85
85
5
– 65 to +150
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
MRF857S
Value
0.114
Max
200
8.4
30
55
17
2.1 W (CW), 24 V
4
800 – 960 MHz
NPN SILICON
CLASS A
Order this document
Max
1
by MRF857/D
MRF857S
(continued)
Watts
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
C/W
mA
C
C
1

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MRF857 Summary of contents

Page 1

... Symbol Max R JC 8.4 Symbol Min Typ Max V (BR)CEO (BR)CES (BR)CBO (BR)EBO CES — — by MRF857/D Unit Vdc Vdc Vdc Watts Unit C/W Unit — Vdc — Vdc — Vdc — Vdc 1 mA (continued) MRF857S ...

Page 2

... MHz 900.1 MHz, Meas. @ IMD 3rd Order = – 40 dBc) Noise Figure ( 0 900 MHz) Input Return Loss ( 0 840 – 900 MHz, Power Output = 2.1 W) Table 1. MRF857S Common Emitter S–Parameters ...

Page 3

... Chip Capacitor C10, C12 43 pF, 100 Mil Chip Capacitor C11 0.8–8 pF, Johansen Gigatrim Micro–Fuse L1 Turns, 20 AWG, 0.126 ID, 46 MMBT2222ALT1, NPN Transistor Q2 BD136, PNP Transistor Figure 1. MRF857S Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA V_SUPPLY + ...

Page 4

... P out 3 2 1 0.05 0.1 0.15 0.2 0. INPUT POWER (WATTS) Figure 3. MRF857S Output Power & Power Gain versus Input Power 850 800 750 700 650 600 550 (Vdc) Figure 5. MRF857S DC SOA (This device is MTBF limited for V CE ...

Page 5

... C10 Figure 7. MRF857S Test Fixture Component Layout MOTOROLA RF DEVICE DATA R10 C11 MRF857S C12 MRF857S 5 ...

Page 6

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INCHES MILLIMETERS MIN MAX MIN MAX 0.200 0.220 5.08 5.59 0.095 0.130 2.41 3.30 0.055 0.065 1.40 1.65 0.040 0.050 1.02 1.27 0.025 0.035 0.64 0.89 0.003 0.007 0.08 0.18 0.235 0.265 5.97 6. NOM 45 NOM 2. BASE 3. EMITTER 4. COLLECTOR Mfax is a trademark of Motorola, Inc. MOTOROLA RF DEVICE DATA MRF857/D ...

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