MRF8P18265H FREESCALE [Freescale Semiconductor, Inc], MRF8P18265H Datasheet

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MRF8P18265H

Manufacturer Part Number
MRF8P18265H
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
• Typical P
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA and multicarrier base station applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
I
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Output Power (2 dB Input Overdrive from Rated P
S--Parameters
DQA
Derate above 25°C
Case Temperature 74°C, 72.5 W CW, 30 Vdc, I
Case Temperature 90°C, 260 W CW
calculators by product.
Documentation/Application Notes -- AN1955.
= 800 mA, V
Frequency
1805 MHz
1840 MHz
1880 MHz
out
@ 3 dB Compression Point ≃ 280 Watts CW
Rating
C
GSB
= 25°C
= 1.3 V, P
(dB)
15.9
16.1
16.0
G
ps
(1,2)
out
(4)
Characteristic
= 72 Watts Avg., IQ Magnitude Clipping,
, 30 Vdc, I
44.8
43.4
43.7
(%)
η
D
Symbol
V
V
V
CW
T
T
DQA
DSS
T
GS
DD
stg
C
J
DQA
Output PAR
= 800 mA, V
= 800 mA, V
(dB)
6.9
7.0
6.7
out
--65 to +150
--0.5, +65
--6.0, +10
)
32, +0
Value
150
225
446
4.5
DD
GSB
GSB
= 30 Volts,
ACPR
(dBc)
--31.7
--31.7
--32.2
= 1.3 V, 1880 MHz
= 1.3 V, 1880 MHz
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
Document Number: MRF8P18265H
RF
RF
MRF8P18265HR6 MRF8P18265HSR6
1805- -1880 MHz, 72 W AVG., 30 V
inA
inB
MRF8P18265HSR6
MRF8P18265HR6
MRF8P18265HR6
/V
MRF8P18265HSR6
/V
Symbol
CASE 375I- -04
N.C.
N.C.
Figure 1. Pin Connections
GSA
GSB
R
CASE 375J- -03
LATERAL N- -CHANNEL
NI- -1230- -8
θJC
NI- -1230S- -8
RF POWER MOSFETs
SINGLE W- -CDMA
1
2
3
4
(Top View)
Value
0.27
0.25
(2,3)
Rev. 1, 2/2012
8
7
6
5
VBW
RF
RF
VBW
outA
outB
°C/W
Unit
A
B
/V
/V
DSA
DSB
1

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MRF8P18265H Summary of contents

Page 1

... W 4.5 W/°C = 800 mA 1.3 V, 1880 MHz DQA GSB , 30 Vdc 800 mA 1.3 V, 1880 MHz DQA GSB Document Number: MRF8P18265H Rev. 1, 2/2012 MRF8P18265HR6 MRF8P18265HSR6 1805- -1880 MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 375I- -04 NI- -1230- -8 MRF8P18265HR6 CASE 375J- -03 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 1805 MHz 1840 MHz 1880 MHz 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in a symmetrical Doherty configuration. MRF8P18265HR6 MRF8P18265HSR6 2 = 25°C unless otherwise noted) Symbol I DSS I DSS ...

Page 3

... VBW res = 72 W Avg ∆G ∆P1dB Min Typ Max Unit = 800 mA 1.3 V, 1805--1880 MHz DQA GSB — 224 — W — 280 — W MHz — 72 — — 88 — MHz — 0.4 — dB — 0.01 — dB/°C — 0.005 — dB/°C MRF8P18265HR6 MRF8P18265HSR6 3 ...

Page 4

... GSB C8 C6 Figure 2. MRF8P18265HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P18265HR6(HSR6) Test Circuit Component Designations and Values Part C1, C2, C3, C4, C13, C14 Chip Capacitors C23, C24 C5, C6, C11, C12 10 μ Chip Capacitors C7, C8 100 μ Chip Capacitors C9, C10 470 μ ...

Page 5

... P , OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 47 = 1.3 Vdc --28 --10 --2 --29 --2.4 --13 --30 --16 --2.8 --31 --3.2 --19 --32 --3.6 --22 --33 --4 --25 1900 1920 100 --25 60 η --27 ACPR -- --31 30 --33 20 --35 10 --37 0 125 MRF8P18265HR6 MRF8P18265HSR6 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 9 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8P18265HR6 MRF8P18265HSR6 6 TYPICAL CHARACTERISTICS 1880 MHz 1840 MHz 1805 MHz ps 1880 MHz 1840 MHz = 30 Vd 1805 MHz DD ...

Page 7

... DQA (1) Max Eff. Z source % Ω 69.3 2.38 -- j6.43 68.9 3.70 -- j7.13 68.3 4.23 -- j7.74 = Test circuit impedance as measured from gate contact to ground. = Test circuit impedance as measured from drain contact to ground. Output Device Load Pull Under Tuner Test Z Z source load Z load Ω 1.31 -- j2.51 1.21 -- j2.50 1.24 -- j2.51 Output Load Pull Tuner Z load Ω 3.10 -- j1.22 2.59 -- j1.37 2.47 -- j1.17 MRF8P18265HR6 MRF8P18265HSR6 7 ...

Page 8

... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P18265HR6 MRF8P18265HSR6 Vdc 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DD DQA 1845 MHz 1880 MHz 1845 MHz ...

Page 9

... RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8P18265HR6 MRF8P18265HSR6 9 ...

Page 10

... MRF8P18265HR6 MRF8P18265HSR6 10 RF Device Data Freescale Semiconductor, Inc. ...

Page 11

... RF Device Data Freescale Semiconductor, Inc. MRF8P18265HR6 MRF8P18265HSR6 11 ...

Page 12

... MRF8P18265HR6 MRF8P18265HSR6 12 RF Device Data Freescale Semiconductor, Inc. ...

Page 13

... from 0.1--0.18 to 0.10--0.18, changed dimension from 0.89--1.02 to 0.89--1.14, changed dimension from 12.47--12.72 to 12.47--12.73. • Replaced Case Outline 375J--02, Issue A with 375J--03, Issue 11, 12. On Sheet 2, changed dimension from 32.13--32.38 to 32.13--32.39, changed dimension from 0.1--0.18 to 0.10--0.18, changed dimension from 8.89--11.43 to 0.89--1.14. RF Device Data Freescale Semiconductor, Inc. REVISION HISTORY Description MRF8P18265HR6 MRF8P18265HSR6 13 ...

Page 14

... Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8P18265HR6 MRF8P18265HSR6 Document Number: MRF8P18265H Rev. 1, 2/2012 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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