MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet

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MRF8S7170N

Manufacturer Part Number
MRF8S7170N
Description
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
• Typical Single-Carrier W-CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for base station applications with frequencies from 728 to 768 MHz.
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1200 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
and Common Source S-Parameters
Case Temperature 80°C, 170 W CW, 28 Vdc, I
Case Temperature 81°C, 50 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes - AN1955.
Frequency
728 MHz
748 MHz
768 MHz
out
out
@ 1 dB Compression Point ] 182 Watts CW
= 50 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
19.7
19.5
19.4
G
ps
(1,2)
Characteristic
Rating
37.1
37.0
37.9
(%)
h
D
DQ
DQ
= 1200 mA
Output PAR
= 1200 mA
(dB)
6.2
6.1
6.1
DD
out
= 28 Volts, I
), Designed for
ACPR
(dBc)
-38.7
-37.5
-37.8
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF8S7170N
728-768 MHz, 50 W AVG., 28 V
MRF8S7170NR3
LATERAL N-CHANNEL
CASE 2021-03, STYLE 1
RF POWER MOSFET
SINGLE W-CDMA
-65 to +150
Value
-0.5, +70
-6.0, +10
32, +0
OM-780-2
Value
PLASTIC
0.30
0.37
150
225
(2,3)
MRF8S7170NR3
Rev. 0, 2/2010
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF8S7170N Summary of contents

Page 1

... Output PAR ACPR D (%) (dB) (dBc) 6.2 -38.7 6.1 -37.5 6.1 -37.8 ), Designed for out = 1200 1200 mA DQ Document Number: MRF8S7170N Rev. 0, 2/2010 MRF8S7170NR3 728-768 MHz AVG SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET CASE 2021-03, STYLE 1 OM-780-2 PLASTIC Symbol Value Unit V -0.5, +70 Vdc DSS V -6.0, +10 ...

Page 2

... Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. Part internally matched both on input and output. MRF8S7170NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I DSS ...

Page 3

... DD DQ P1dB IMD sym VBW res = 50 W Avg. G out F ΔG ΔP1dB Min Typ Max = 1200 mA, 728-768 MHz Bandwidth — 182 — — 16 — — 65 — — 0.5 — — 0.017 — — 0.0048 — MRF8S7170NR3 Unit W MHz MHz dB dB/°C dBm/°C 3 ...

Page 4

... Figure 1. MRF8S7170NR3 Test Circuit Component Layout Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values Part B1 Ferrite Bead, Short C1 2.7 pF Chip Capacitor C2 2.2 pF Chip Capacitor C3, C4 9.1 pF Chip Capacitors 47 μ Electrolytic Capacitor C5 6.8 μF, 100 V Chip Capacitor C6 C7 100 pF Chip Capacitor ...

Page 5

... PAR = 7 0.01% Probability on CCDF OUTPUT POWER (WATTS) out Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power -35 - -0.5 -36.5 -15 -1 -37 -19 -1.5 -37.5 -23 -2 -38 -27 -2.5 780 790 100 - -25 50 -30 - -40 PARC 35 -45 30 -50 110 130 MRF8S7170NR3 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S7170NR3 6 TYPICAL CHARACTERISTICS 728 MHz 748 MHz 768 MHz ps 768 MHz = 28 Vdc 1200 748 MHz 728 MHz ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Network Test Z Z source load Output Matching Network MRF8S7170NR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S7170NR3 8 = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle = 28 Vdc 748 MHz 728 MHz 748 MHz 728 MHz 768 MHz ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S7170NR3 9 ...

Page 10

... MRF8S7170NR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S7170NR3 11 ...

Page 12

... For Software and Tools Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part's Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date • Initial Release of Data Sheet 0 Feb. 2010 MRF8S7170NR3 12 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 13

... Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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