MRF8S7235N FREESCALE [Freescale Semiconductor, Inc], MRF8S7235N Datasheet
MRF8S7235N
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MRF8S7235N Summary of contents
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... ACPR η D (%) (dB) (dBc) 6.3 --38.1 6.4 --39.0 6.4 --38.7 ), Designed for out = 1400 mA, 728 MHz DQ = 1400 mA, 728 MHz DQ Document Number: MRF8S7235N Rev. 0, 6/2012 MRF8S7235NR3 728- -768 MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET OM- -780- -2 PLASTIC Symbol Value Unit V --0.5, +70 Vdc DSS V --6.0, +10 Vdc ...
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... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. Part internally matched both on input and output. MRF8S7235NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I DSS ...
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... Vdc 1400 mA, 728--768 MHz Bandwidth DD DQ P1dB IMD sym VBW res = 63 W Avg ∆G ∆P1dB Min Typ Max Unit — 260 — W — 10 — MHz — 40 — MHz — 0.3 — dB — 0.0124 — dB/°C — 0.005 — dB/°C MRF8S7235NR3 3 ...
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... R1 C9 C14 C13* C16 *C4, C5, C11, C12, C13, C17, C27, C28, C29 and C30 are mounted vertically. Figure 1. MRF8S7235NR3 Test Circuit Component Layout Table 6. MRF8S7235NR3 Test Circuit Component Designations and Values Part B1 Ferrite Bead C1, C2, C3, C4 μF Chip Capacitors C6, C7, C8 3.3 μ ...
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... 110 P , OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power η --35 --10 --1.1 --36 --1.2 --12 --37 --1.3 --14 --38 --1.4 --16 --39 --1.5 --18 --40 --20 --1.6 780 790 100 -- --25 50 --30 --35 40 --40 30 PARC --45 20 --50 10 130 MRF8S7235NR3 5 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S7235NR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 1400 mA, Single--Carrier 728 MHz 728 MHz 748 MHz 768 MHz 10 ...
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... MHz Ω Ω 710 0.95 - j0.82 1.19 - j1.03 720 0.93 - j0.81 1.05 - j0.99 730 0.89 - j0.77 0.92 - j0.91 740 0.87 - j0.73 0.85 - j0.82 750 0.89 - j0.73 0.83 - j0.78 760 0.92 - j0.77 0.83 - j0.77 770 0.89 - j0.81 0.79 - j0.76 780 0.80 - j0.77 0.71- j0.68 790 0.70 - j0.66 0.61 - j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Input Device Matching Under Network Test Z Z source load Output Matching Network MRF8S7235NR3 7 ...
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... Load impedance for optimum P1dB efficiency Impedance as measured from gate contact to ground. source Z = Impedance as measured from drain contact to ground. load Figure 11. Load Pull Performance — Maximum Drain Efficiency Tuning MRF8S7235NR3 Vdc 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DQ Max Output Power P1dB (1) ...
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... RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8S7235NR3 9 ...
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... MRF8S7235NR3 10 RF Device Data Freescale Semiconductor, Inc. ...
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... RF Device Data Freescale Semiconductor, Inc. MRF8S7235NR3 11 ...
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... For Software and Tools Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 June 2012 • Initial Release of Data Sheet MRF8S7235NR3 12 REVISION HISTORY Description RF Device Data Freescale Semiconductor, Inc. ...
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... Home Page: freescale.com Web Support: freescale.com/support RF Device Data Document Number: MRF8S7235N Rev. 0, 6/2012 Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document ...