MRF8S8260H FREESCALE [Freescale Semiconductor, Inc], MRF8S8260H Datasheet

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MRF8S8260H

Manufacturer Part Number
MRF8S8260H
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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 Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
895 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
 Typical Single--Carrier W--CDMA Performance: V
 Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW
 Typical P
Features
 100% PAR Tested for Guaranteed Output Power Capability
 Characterized with Series Equivalent Large--Signal Impedance Parameters
 Internally Matched for Ease of Use
 Integrated ESD Protection
 Greater Negative Gate--Source Voltage Range for Improved Class C Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 790 to
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1500 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
and Common Source S--Parameters
For R5 Tape and Reel option, see p. 16.
Derate above 25C
Case Temperature 83C, 70 W CW, 28 Vdc, I
Case Temperature 80C, 260 W CW
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
850 MHz
875 MHz
895 MHz
out
out
@ 1 dB Compression Point ≃ 260 Watts CW
= 70 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25C
(dB)
21.3
21.4
21.1
G
Characteristic
ps
(2,3)
Rating
(1)
, 28 Vdc, I
36.2
37.4
37.5
(%)
D
DQ
= 1500 mA, 895 MHz
DQ
Output PAR
= 1500 mA, 895 MHz
(dB)
DD
6.5
6.3
6.2
out
= 28 Volts, I
), Designed for
(1)
ACPR
(dBc)
--37.0
--36.7
--36.9
DQ
=
(1)
Symbol
Symbol
V
R
V
V
CW
T
T
DSS
T
JC
GS
DD
stg
C
J
Document Number: MRF8S8260H
850- -895 MHz, 70 W AVG. 28 V
MRF8S8260HSR3
MRF8S8260HR3 MRF8S8260HSR3
MRF8S8260HSR3
MRF8S8260HR3
MRF8S8260HR3
CASE 465B- -04
CASE 465C- -03
LATERAL N- -CHANNEL
RF POWER MOSFETs
-- 65 to +150
Value
NI- -880S
--0.5, +70
--6.0, +10
NI- -880
SINGLE W- -CDMA
32, +0
Value
0.94
0.36
0.31
150
225
201
(3,4)
Rev. 1, 2/2012
W/C
C/W
Unit
Unit
Vdc
Vdc
Vdc
C
C
C
W
1

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MRF8S8260H Summary of contents

Page 1

... Symbol Symbol R = 1500 mA, 895 MHz Vdc 1500 mA, 895 MHz DQ Document Number: MRF8S8260H Rev. 1, 2/2012 MRF8S8260HR3 MRF8S8260HSR3 850- -895 MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs CASE 465B- -04 NI- -880 MRF8S8260HR3 CASE 465C- -03 NI- -880S MRF8S8260HSR3 Value --0 ...

Page 2

... Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 850 MHz 875 MHz 895 MHz 1. Part internally matched both on input and output. MRF8S8260HR3 MRF8S8260HSR3 2 = 25C unless otherwise noted) Symbol I DSS I ...

Page 3

... MHz Bandwidth DD DQ P1dB IMD sym VBW res = 70 W Avg G P1dB Min Typ Max Unit (1) — 260 — W MHz — 9.7 — — 60 — MHz — 0.3 — dB — 0.016 — dB/C — 0.002 — dB/C MRF8S8260HR3 MRF8S8260HSR3 3 ...

Page 4

... C11 -- R2 C10 C2 C1 *C1 and C20 are mounted vertically. Figure 1. MRF8S8260HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S8260HR3(HSR3) Test Circuit Component Designations and Values Part B1 RF Bead C1 2.7 pF Chip Capacitor C2 100 pF Chip Capacitor C3 2.4 pF Chip Capacitor C4 5.1 pF Chip Capacitor C5 C7 3.3 pF Chip Capacitors C6 ...

Page 5

... OUTPUT POWER (WATTS) out Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 1500 --1 --36 --37 --4 --1.2 --38 --8 --1.4 --39 --12 --1.6 --40 --16 --1.8 --41 --20 --2 960 980 100 -- --30  --35 -- --45 32 PARC --50 26 --55 20 140 MRF8S8260HR3 MRF8S8260HSR3 5 ...

Page 6

... Channel Bandwidth @ 5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S8260HR3 MRF8S8260HSR3 6 TYPICAL CHARACTERISTICS 850 MHz 875 MHz 875 MHz 895 MHz 895 MHz ps  Vdc 1500 mA DD ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Network Test Z Z source load Output Matching Network MRF8S8260HR3 MRF8S8260HSR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS V 63.5 62 60.5 59 57.5 56 54.5 53 51 NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S8260HR3 MRF8S8260HSR3 Vdc 1500 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle DD DQ 851 MHz 865 MHz 865 MHz 880 MHz 851 MHz 895 MHz 29.5 31 32 ...

Page 9

... RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8S8260HR3 MRF8S8260HSR3 9 ...

Page 10

... MRF8S8260HR3 MRF8S8260HSR3 10 RF Device Data Freescale Semiconductor, Inc. ...

Page 11

... RF Device Data Freescale Semiconductor, Inc. MRF8S8260HR3 MRF8S8260HSR3 11 ...

Page 12

... MRF8S8260HR3 MRF8S8260HSR3 12 RF Device Data Freescale Semiconductor, Inc. ...

Page 13

... Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 Suffix = 50 Units Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8S8260H and MRF8S8260HS parts will be available for 2 years after release of MRF8S8260H and MRF8S8260HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option ...

Page 14

... Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF8S8260HR3 MRF8S8260HSR3 Document Number: MRF8S8260H Rev. 1, 2/2012 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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