MRF8S9100HR3_10 FREESCALE [Freescale Semiconductor, Inc], MRF8S9100HR3_10 Datasheet

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MRF8S9100HR3_10

Manufacturer Part Number
MRF8S9100HR3_10
Description
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical GSM Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW
• Typical P
• Typical GSM EDGE Performance: V
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
72 Watts CW
Output Power (3 dB Input Overdrive from Rated P
45 Watts Avg.
and Common Source S--Parameters
Operation
calculators by product.
Frequency
920 MHz
940 MHz
960 MHz
out
Frequency
@ 1 dB Compression Point ≃ 108 Watts CW
920 MHz
940 MHz
960 MHz
(dB)
19.1
19.1
19.0
G
ps
(%)
η
43
44
45
D
(1,2)
DD
= 28 Volts, I
Rating
@ 400 kHz
DD
(dBc)
--64.1
--63.6
--62.8
SR1
= 28 Volts, I
(dB)
19.3
19.3
19.1
G
ps
DQ
= 500 mA, P
@ 600 kHz
out
DQ
(dBc)
--74.5
--74.6
--75.1
)
SR2
= 700 mA, P
out
51.6
52.9
54.1
(%)
η
D
=
(% rms)
EVM
1.8
2.0
2.3
out
=
Symbol
V
V
V
T
T
DSS
T
GS
DD
stg
C
J
CASE 465- -06, STYLE 1
CASE 465A- -06, STYLE 1
Document Number: MRF8S9100H
MRF8S9100HSR3
920- -960 MHz, 72 W CW, 28 V
MRF8S9100HR3 MRF8S9100HSR3
MRF8S9100HR3
MRF8S9100HSR3
MRF8S9100HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -780
NI- -780S
GSM, GSM EDGE
--65 to +150
--0.5, +70
--6.0, +10
32, +0
Value
150
225
Rev. 1, 10/2010
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF8S9100HR3_10 Summary of contents

Page 1

... Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • ...

Page 2

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW, 28 Vdc, I Case Temperature 81° CW, 28 Vdc, I Case Temperature 82° CW, 28 Vdc, I Table 3. ESD ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system Compression Point, CW out IMD Symmetry @ 100 W PEP, P where IMD Third Order out Intermodulation  30 dBc ...

Page 4

Figure 1. MRF8S9100HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S9100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short RF Bead C1 Chip Capacitors C2 5.6 pF Chip Capacitor C3 7.5 pF ...

Page 5

800 Figure 2. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ 800 Figure 3. Power Gain, Input Return Loss, EVM ...

Page 6

Vdc 700 EDGE Modulation Avg. out Avg Avg. 0 800 820 840 860 880 900 920 f, FREQUENCY ...

Page 7

Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = ...

Page 8

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9100HR3 MRF8S9100HSR3 Vdc, ...

Page 9

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9100HR3 MRF8S9100HSR3 9 ...

Page 10

MRF8S9100HR3 MRF8S9100HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor MRF8S9100HR3 MRF8S9100HSR3 11 ...

Page 12

MRF8S9100HR3 MRF8S9100HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices ...

Page 14

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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