MRF9002RS MOTOROLA [Motorola, Inc], MRF9002RS Datasheet

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MRF9002RS

Manufacturer Part Number
MRF9002RS
Description
RF POWER FIELD EFFECT TRANSISTOR ARRAY
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect
Transistor Array
N–Channel Enhancement–Mode Lateral MOSFET
cies to 1.0 GHz. The high gain and broadband performance of this device make
it ideal for large–signal, common–source amplifier applications in 26 volt base
station equipment.
• Typical Performance at 960 MHz, 26 Volts
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
• Available in Tape and Reel. R2 Suffix = 1,500 Units
MOISTURE SENSITIVITY LEVEL
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 3
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Dissipation Per Transistor @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case, Single Transistor
Per JESD 22–A113
Designed for broadband commercial and industrial applications with frequen-
Output Power
Impedance Parameters
per 16 mm, 13 inch Reel.
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
Test Methodology
Characteristic
C
Rating
= 25°C
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
NOTE: Exposed backside flag is source
MRF9002R2
LATERAL N–CHANNEL
RF POWER MOSFET
PIN CONNECTIONS
terminal for transistors.
1.0 GHz, 2 W, 26 V
–65 to +150
BROADBAND
–0.5, +15
Rating
CASE 978–03
Value
Max
150
65
12
PLASTIC
4
3
PFP–16
Order this document
by MRF9002R2/D
MRF9002R2
Watts
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9002RS Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies to 1.0 GHz. The high gain and broadband performance of this ...

Page 2

ELECTRICAL CHARACTERISTICS (T C Characteristic ON CHARACTERISTICS Gate Threshold Voltage = 20 µAdc Vdc Gate Quiescent Voltage ( Vdc mAdc Drain–Source On–Voltage ( Vdc, I ...

Page 3

Figure 1. MRF9002R2 Broadband Test Circuit Schematic Table 1. MRF9002R2 Broadband Test Circuit Component Designations and Values Designators C1–C6 C7–C12 C13 C14, C15 C16, C17 C18 L1–L6 R1–R3 Z1, Z11 Z2, Z7, Z12 Z3, Z8, Z13 Z4, Z14 Z5, Z15 ...

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Figure 2. MRF9002R2 Broadband Test Circuit Component Layout MRF9002R2 4 Pin 1 MOTOROLA RF DEVICE DATA ...

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Figure 3. Output Power and Power Gain versus Input Power Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage Figure 7. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 4. Power Gain versus Output ...

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Figure 9. Capacitance versus Drain Source Voltage MRF9002R2 6 MOTOROLA RF DEVICE DATA ...

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Ω MHz 925 4.5 – j13.3 23.4 – j9.2 960 4.3 – j15.3 23.2 – j10.4 985 4.1 – j15.8 23.0 – j11.1 Transistor Ω MHz 925 6.0 – j12.3 ...

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MRF9002R2 8 NOTES MOTOROLA RF DEVICE DATA ...

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MOTOROLA RF DEVICE DATA NOTES MRF9002R2 9 ...

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MRF9002R2 10 NOTES MOTOROLA RF DEVICE DATA ...

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MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS BOTTOM VIEW b1 É É É É Ç Ç Ç Ç Ç ...

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of ...

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