MRF9060R1 MOTOROLA [Motorola, Inc], MRF9060R1 Datasheet

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MRF9060R1

Manufacturer Part Number
MRF9060R1
Description
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in 26
volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
REV 4
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — –31 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9060R1
MRF9060SR1
MRF9060R1
MRF9060SR1
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF9060SR1
MRF9060R1
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 360B–05, STYLE 1
CASE 360C–05, STYLE 1
945 MHz, 60 W, 26 V
M1 (Minimum)
1 (Minimum)
–65 to +200
MRF9060R1 MRF9060SR1
BROADBAND
–0.5, +15
MRF9060SR1
Class
Value
MRF9060R1
0.91
1.25
Max
159
219
200
1.1
0.8
65
NI–360S
NI–360
Order this document
by MRF9060/D
Watts
Watts
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9060R1 Summary of contents

Page 1

... MRF9060SR1 Symbol Value V 65 DSS V –0.5, +15 GS MRF9060R1 P 159 D 0.91 MRF9060SR1 219 1.25 T –65 to +200 stg T 200 J Class 1 (Minimum) M1 (Minimum) Symbol Max MRF9060R1 R 1.1 θJC MRF9060SR1 0.8 MRF9060R1 MRF9060SR1 Order this document by MRF9060/D NI–360 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C Unit °C/W 1 ...

Page 2

... Adc DYNAMIC CHARACTERISTICS Input Capacitance = 26 Vdc ± 30 mV(rms) MHz Output Capacitance = 26 Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance = 26 Vdc ± 30 mV(rms) MHz MRF9060R1 MRF9060SR1 2 = 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — GSS V 2 ...

Page 3

... IMD — –31 IRL — –16 P — 1dB G — ps η — Ψ No Degradation In Output Power Max Unit 17 — — % –28 dBc – — — % — dBc — — — — % MRF9060R1 MRF9060SR1 3 ...

Page 4

... N1, N2 N–Type Panel Mount, Stripline WB1, WB2 10 mil Brass Wear Blocks Board Material 30 mil Glass Teflon PCB Etched Circuit Board MRF9060R1 MRF9060SR1 4 Z10 0.360″ x 0.270″ Microstrip Z11 0.060″ x 0.270″ Microstrip Z12 0.110″ x 0.060″ Microstrip Z13 0.330″ ...

Page 5

... Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9060 900 MHz MRF9060R1 MRF9060SR1 5 ...

Page 6

... Figure 3. Class AB Broadband Circuit Performance Figure 4. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MRF9060R1 MRF9060SR1 6 TYPICAL CHARACTERISTICS Figure 5. Intermodulation Distortion versus Figure 7. Power Gain and Efficiency versus Output Power h Output Power MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 8. Power Gain, Efficiency, and IMD MOTOROLA RF DEVICE DATA versus Output Power MRF9060R1 MRF9060SR1 7 ...

Page 8

... MHz 930 945 960 Z = Complex conjugate of source impedance Complex conjugate of the optimum load OL impedance at a given output power, voltage, IMD, bias current and frequency. Figure 9. Series Equivalent Input and Output Impedance MRF9060R1 MRF9060SR1 8 Ω Ω Ω 0.80 + j0.10 2.08 – j0.65 0.80 + j0.05 2.07 – j0.38 0.81 + j0.10 2.04 – ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9060R1 MRF9060SR1 9 ...

Page 10

... MRF9060R1 MRF9060SR1 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 360C–05 ISSUE D NI–360S MRF9060SR1 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF9060R1 MRF9060SR1 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF9060R1 MRF9060SR1 12 MOTOROLA RF DEVICE DATA MRF9060/D ...

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