MRF962_07 ASI [Advanced Semiconductor], MRF962_07 Datasheet

MRF962_07

Manufacturer Part Number

MRF962_07

Description

NPN SILICON RF TRANSISTOR

Manufacturer

ASI [Advanced Semiconductor]

Datasheet

1.MRF962_07.pdf (1 pages)

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A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

DESCRIPTION:

The

Low-to-medium power amplifier

applications, requiring high gain, low

noise figure, and low intermodulation

distortion.

FEATURES:

• NF = 2.0 dB

• Omnigold™ Metalization System

• Hermetic stripline, ceramic package

MAXIMUM RATINGS

CHARACTERISTICS

SYMBOL

DISS

STG

ASI MRF962

CBO

CEO

EBO

.75 W @ T

-65 °C to +200 °C

-65 °C to +150 °C

= 100 µA

= 1.0 mA

= 100 µA

133 °C/W

= 10 V

100 mA

is designed for

20 V

NPN SILICON RF TRANSISTOR

= 100 °C

NONETEST CONDITIONS

= 25 °C

= 50 mA

= 10 mA

= 50 mA

Specifications are subject to change without notice.

f = 0.5 GHz

f = 1.0 MHz

MINIMUM TYPICAL MAXIMUM

PACKAGE STYLE

3.0

1.2

4.5

2.0

1 = COLLECTOR

2 = EMITTER

3 = BASE

4 = EMITTER

DIM

2.29

0.89

0.41

0.89

0.08

4.45

MILLIMETER

MIN

100

200

1.5

MAX

2.67

0.15

5.84

1.40

0.61

1.09

MRF962

0.090

0.035

0.016

0.035

0.003

0.175

MIN

INCHES

UNITS

GHz

0.105

0.055

0.024

0.043

0.006

0.230

REV. B

MAX

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