MRFE6S9130HR3_08 FREESCALE [Freescale Semiconductor, Inc], MRFE6S9130HR3_08 Datasheet

no-image

MRFE6S9130HR3_08

Manufacturer Part Number
MRFE6S9130HR3_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier
applications.
• Typical Single - Carrier N - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for N - CDMA, GSM and GSM EDGE base station applications
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Designed for Enhanced Ruggedness
Case Temperature 80°C, 130 W CW
Case Temperature 75°C, 27 W CW
out
Power Gain — 19.2 dB
Drain Efficiency — 30.5%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 950 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
Document Number: MRFE6S9130H
C
J
CASE 465A - 06, STYLE 1
MRFE6S9130HR3 MRFE6S9130HSR3
CASE 465 - 06, STYLE 1
MRFE6S9130HSR3
MRFE6S9130HR3
MRFE6S9130HSR3
MRFE6S9130HR3
880 MHz, 27 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780S
NI - 780
SINGLE N - CDMA
- 65 to +150
Value
- 0.5, +66
- 0.5, +12
Value
0.45
0.51
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRFE6S9130HR3_08

MRFE6S9130HR3_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance Watts Avg 880 MHz CDMA (Pilot, Sync, Paging, Traffic out Codes 8 Through 13) Channel Bandwidth = 1 ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

BIAS + INPUT 0.383″ x 0.080″ Microstrip Z2 1.250″ x 0.080″ Microstrip Z3 0.190″ x 0.220″ Microstrip Z4 0.127″ x 0.220″ Microstrip Z5 ...

Page 4

C7 C1 Figure 2. MRFE6S9130HR3(SR3) Test Circuit Component Layout MRFE6S9130HR3 MRFE6S9130HSR3 4 B2 900 MHz Rev C10 C19 C16 C17 C18 C15 C14 C13 C12 C11 RF Device Data ...

Page 5

G ps 18.5 18 17.5 17 16.5 ACPR 16 ALT1 15.5 15 820 840 Figure 3. Single - Carrier N - CDMA Broadband Performance @ P 19 18.5 η 17.5 17 16.5 16 15.5 15 ...

Page 6

Vdc 130 W (PEP) DD out I = 950 mA, Two−Tone Measurements DQ −10 (f1 + f2)/2 = Center Frequency of 880 MHz −20 IM3−U IM3−L −30 −40 IM5−L IM5−U IM7−U −50 IM7−L −60 ...

Page 7

100 150 P , OUTPUT POWER (WATTS) CW out Figure 11. Power Gain versus Output Power 100 10 1 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic ...

Page 8

Figure 15. Series Equivalent Source and Load Impedance MRFE6S9130HR3 MRFE6S9130HSR3 910 MHz Z load f = 850 MHz = 2 Ω 910 MHz Z source f = 850 MHz Vdc, ...

Page 9

(FLANGE) D bbb (FLANGE (FLANGE (FLANGE) D bbb ...

Page 10

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 11

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

Related keywords