MRFG35002N6T1_08 FREESCALE [Freescale Semiconductor, Inc], MRFG35002N6T1_08 Datasheet

MRFG35002N6T1_08

Manufacturer Part Number

MRFG35002N6T1_08

Description

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRFG35002N6T1_08.pdf (12 pages)

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RF Device Data

Freescale Semiconductor

Gallium Arsenide PHEMT

RF Power Field Effect Transistor

from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Customer Premise Equipment (CPE) applications.

• Typical Single - Carrier W - CDMA Performance: V

• 1.5 Watts P1dB @ 3550 MHz, CW

• Excellent Phase Linearity and Group Delay Characteristics

• High Gain, High Efficiency and High Linearity

• RoHS Compliant.

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Freescale Semiconductor

Technical Data

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. Moisture Sensitivity Level

MRFG35002N6T1 replaced by MRFG35002N6AT1.

Drain - Source Voltage

Gate - Source Voltage

RF Input Power

Storage Temperature Range

Channel Temperature

Operating Case Temperature Range

Thermal Resistance, Junction to Case

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized

1. For reliable operation, the operating channel temperature should not exceed 150°C.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

65 mA, P

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Select Documentation/Application Notes - AN1955.

Power Gain — 10 dB

Drain Efficiency — 27%

ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth

out

= 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =

(1)

Test Methodology

Characteristic

Rating

= 6 Volts, I

Rating

Symbol

DSS

Package Peak Temperature

θJC

stg

Document Number: MRFG35002N6

MRFG35002N6T1

CASE 466 - 03, STYLE 1

260

3.5 GHz, 1.5 W, 6 V

- 65 to +150

- 20 to +85

GaAs PHEMT

Value

POWER FET

Value

15.2

175

PLASTIC

- 5

PLD - 1.5

(2)

MRFG35002N6T1

Rev. 2, 1/2008

°C/W

Unit

dBm

Unit

Vdc

°C

Related parts for MRFG35002N6T1_08

MRFG35002N6T1_08 Summary of contents

Page 1

Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB ...

Page 2

Table 4. Electrical Characteristics (T Characteristic Saturated Drain Current (V = 3.5 Vdc Vdc Off State Leakage Current ( 0.4 Vdc Vdc Off State Drain Current (V = ...

Page 3

V BIAS C13 C12 C11 C10 C9 RF INPUT Z1, Z14 0.044″ x 0.125″ Microstrip Z2 0.044″ x 0.500″ Microstrip Z3 0.044″ x 0.052″ Microstrip Z4 0.468″ x 0.010″ Microstrip Z5 0.468″ x 0.356″ ...

Page 4

C13 C12 C12 C11 C10 Figure 2. MRFG35002N6 Test Circuit Component Layout MRFG35002N6T1 4 C18 C22 C23 C14 C17 C16 C15 C19 C20 C21 C24 MRFG35002M6, Rev. 2 3.5 GHz ...

Page 5

NOTE: All data is referenced to package lead interface. Γ All data is generated from load pull, not from the test circuit shown. RF Device Data Freescale Semiconductor TYPICAL ...

Page 6

V Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth 12 PAR = 8 0.01% Probability (CCDF Figure 5. Single - Carrier W - CDMA Power Gain −20 V Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth ...

Page 7

Table 6. Class AB Common Source S - Parameters GHz |S | ∠ φ 11 0.50 0.906 - 173.61 0.55 0.906 - 175.37 0.60 0.906 - 176.93 0.65 0.906 - 178.40 0.70 0.908 - ...

Page 8

Table 6. Class AB Common Source S - Parameters GHz |S | ∠ φ 11 2.80 0.890 140.26 2.85 0.889 139.29 2.90 0.888 138.19 2.95 0.887 137.20 3.00 0.885 136.18 3.05 0.884 135.00 3.10 ...

Page 9

Table 6. Class AB Common Source S - Parameters GHz |S | ∠ φ 11 5.10 0.826 62.21 5.15 0.824 59.75 5.20 0.821 57.08 5.25 0.819 54.50 5.30 0.818 51.91 5.35 0.815 49.24 5.40 ...

Page 10

ZONE V 4 É É É É É É É É É É É É É É É É ZONE W 1 É É É É É É É ...

Page 11

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers The following table summarizes revisions to this document. Revision Date 2 Jan. 2008 • Listed replacement part ...

Page 12

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 480 ...

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