s808500g Roithner LaserTechnik GmbH, s808500g Datasheet

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s808500g

Manufacturer Part Number
s808500g
Description
High Power Laser Diodes High Power Infrared Laserdiode
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
S808500G
Structure: InGaAs, active MQW
Lasing wavelength: 808 nm typ., multimode
Output power: 500 mW, cw
Package: 9 mm
PIN CONNECTION:
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Threshold Current
Operation Current
Operation Voltage
Slope Efficiency
Lasing Wavelength
Beam Divergence
Beam Divergence
Lasing Aperture
Monitor Current
CHARACTERISTIC
Absolute Maximum Ratings (Tc = 25°C)
Optical-Electrical Characteristics (Tc = 25°C)
High Power Infrared Laserdiode
CHARACTERISTIC
ROITHNER LASERTECHNIK
ROITHNER LASERTECHNIK
e-mail: rlt@mcb.at
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
A-1040 WIEN, FLEISCHMANNGASSE 9
SYMBOL TEST CONDITION MIN TYP MAX
V
I
I
I
A
TECHNICAL DATA
op
th
m
op
//
SYMBOL
V
V
T
R(PD)
R(LD)
P
T
STG
C
o
P
P
P
P
P
P
P
cw operation
cw operation
o
o
o
o
o
o
o
http://www.roithner.mcb.at
= 500 mW
= 500 mW
= 500 mW
= 500 mW
= 500 mW
= 500 mW
= 500 mW
-10 .. +40
-40 .. +85
RATING
500
30
2
803
0.9
6.5
35
1
50x1
130
650
808
1.9
7.5
2.5
38
1
MUST BE COOLED!
LASERDIODE
1.09
165
720
813
2.4
45
NOTE!
9
4
UNIT
mW
°C
°C
V
V
UNIT
W/A
µm²
mA
mA
mA
nm
V
°
°

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