p5506nvg ETC-unknow, p5506nvg Datasheet

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... 250µ GS(th -250µ 0V ±20V GSS ±20V P5506NVG Lead-Free G : GATE D : DRAIN S : SOURCE N-Channel P-Channel UNITS ±20 ±20 GS 4 -55 to 150 j stg ...

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... N-Channel 25V 1MHz oss P-Channel -30V 1MHz N- rss N-Channel 0. (BR)DSS 4. P-Channel (BR)DSS -3. P5506NVG Lead-Free N- °C N-Ch 10 P-Ch - °C N-Ch 20 P-Ch -20 N- P-Ch 90 150 N- P- N-Ch 14 P-Ch 9 N-Ch 650 P-Ch 760 N- P-Ch 40 N-Ch 12 ...

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... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P5506NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Field Effect Transistor N-Channel t d(on) ...

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... N- & P-Channel Enhancement Mode NIKO-SEM N-CHANNEL Field Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0.0001 0 4 P5506NVG SOP-8 Lead-Free T = 125° 25° C -55° C 0.2 0.4 0.6 0.8 1.0 1 Body Diode Forward Voltage(V) SD AUG-17-2004 ...

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... N- & P-Channel Enhancement Mode NIKO-SEM Field Effect Transistor 5 P5506NVG SOP-8 Lead-Free AUG-17-2004 ...

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... N- & P-Channel Enhancement Mode NIKO-SEM P-CHANNEL Field Effect Transistor Body Diode Forward Voltage Variation with Source Current and Temperature 100 0.1 0.01 0.001 0 0 Body Diode Forward Voltage(V) 6 P5506NVG Lead-Free T = 125° C 25° -55° C 0.4 0.6 0.8 1.0 1.2 SD AUG-17-2004 SOP-8 1.4 ...

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... N- & P-Channel Enhancement Mode NIKO-SEM Field Effect Transistor 7 P5506NVG SOP-8 Lead-Free AUG-17-2004 ...

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... N- & P-Channel Enhancement Mode NIKO-SEM SOIC-8(D) MECHANICAL DATA Dimension Min. A 4.8 3.8 B 5.8 C 0.38 0.445 D E 1. Field Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P5506NVG mm Min. Typ. 0.5 0.715 0.18 0.254 0.22 0° 4° SOP-8 Lead-Free Max. 0.83 0.25 8° AUG-17-2004 ...