HEF4081BT,653 NXP Semiconductors, HEF4081BT,653 Datasheet - Page 5

IC 2IN AND GATE QUAD 14SOIC

HEF4081BT,653

Manufacturer Part Number
HEF4081BT,653
Description
IC 2IN AND GATE QUAD 14SOIC
Manufacturer
NXP Semiconductors
Series
4000Br
Datasheet

Specifications of HEF4081BT,653

Number Of Circuits
4
Package / Case
14-SOIC (3.9mm Width), 14-SOL
Logic Type
AND Gate
Number Of Inputs
2
Current - Output High, Low
4.2mA, 4.2mA
Voltage - Supply
3 V ~ 15 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Product
AND
Logic Family
HEF4000
High Level Output Current
- 3.6 mA
Low Level Output Current
3.6 mA
Propagation Delay Time
20 ns
Supply Voltage (max)
15.5 V
Supply Voltage (min)
3 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Logical Function
AND
Number Of Elements
4
Operating Supply Voltage (typ)
3.3/5/9/12V
Operating Temp Range
-40C to 125C
Package Type
SO
Number Of Outputs
1
Technology
CMOS
Mounting
Surface Mount
Pin Count
14
Operating Temperature Classification
Automotive
Quiescent Current
1uA
Operating Supply Voltage (max)
15V
Operating Supply Voltage (min)
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933373090653
HEF4081BTD-T
HEF4081BTD-T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HEF4081BT,653
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
10. Dynamic characteristics
Table 7.
T
[1]
Table 8.
V
HEF4081B_6
Product data sheet
Symbol Parameter
t
t
t
t
Symbol Parameter
P
PHL
PLH
THL
TLH
amb
SS
D
The typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (C
= 0 V; t
= 25
°
dynamic power dissipation
HIGH to LOW
propagation delay
LOW to HIGH
propagation delay
HIGH to LOW output
transition time
LOW to HIGH output
transition time
C; for waveforms see
r
Dynamic characteristics
Dynamic power dissipation
= t
f
20 ns; T
amb
= 25
Figure
Conditions
nA or nB to nY
nA or nB to nY
°
C.
V
10 V P
15 V P
4; for test circuit see
5 V P
DD
Typical formula
D
D
D
Rev. 06 — 2 December 2009
V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
= 450 × f
= 2900 × f
= 11700 × f
5 V
5 V
5 V
5 V
DD
i
+ Σ(f
i
i
Figure
+ Σ(f
Extrapolation formula
28 ns + (0.55 ns/pF)C
14 ns + (0.23 ns/pF)C
12 ns + (0.16 ns/pF)C
18 ns + (0.55 ns/pF)C
10 ns + (1.0 ns/pF)C
10 ns + (1.00 ns/pF)C
+ Σ(f
9 ns + (0.23 ns/pF)C
7 ns + (0.16 ns/pF)C
9 ns + (0.42 ns/pF)C
6 ns + (0.28 ns/pF)C
9 ns + (0.42 ns/pF)C
6 ns + (0.28 ns/pF)C
o
o
× C
o
× C
5; unless otherwise specified.
× C
L
) × V
L
L
) × V
) × V
DD
DD
DD
2
2
(μW)
2
(μW)
(μW)
L
L
L
L
L
L
L
L
L
L
L
L
where:
f
f
C
Σ(f
V
i
o
Min
DD
= input frequency in MHz;
L
= output frequency in MHz;
o
= output load capacitance in pF;
-
-
-
-
-
-
-
-
-
-
-
-
× C
= supply voltage in V.
L
) = sum of the outputs;
Quad 2-input AND gate
Typ
55
25
20
45
20
15
60
30
20
60
30
20
[1]
HEF4081B
© NXP B.V. 2009. All rights reserved.
Max
110
120
120
50
40
90
40
30
60
40
60
40
L
in pF).
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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