UPD45128163-A75L ELPIDA [Elpida Memory], UPD45128163-A75L Datasheet

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UPD45128163-A75L

Manufacturer Part Number
UPD45128163-A75L
Description
128M-bit Synchronous DRAM 4-bank, LVTTL
Manufacturer
ELPIDA [Elpida Memory]
Datasheet
Document No. E0344N10 (Ver.1.0)
Date Published February 2003 (K) Japan
URL: http://www.elpida.com
Description
2,097,152
Features
The PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as
The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAM is compatible with Low Voltage TTL (LVTTL).
This product is packaged in 54-pin TSOP (II).
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0(A13) and BA1(A12)
Byte control by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3 V
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
16 organization
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
16
0.3 V power supply
4 (word
bit
bank).
128M-bit Synchronous DRAM
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
4-bank, LVTTL
DATA SHEET
MOS INTEGRATED CIRCUIT
PD45128163
Elpida Memory, Inc. 2003

Related parts for UPD45128163-A75L

UPD45128163-A75L Summary of contents

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Description The PD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 16 4 (word bit bank). The synchronous DRAM achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of ...

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Ordering Information Part number (word PD45128163G5-A75A-9JF PD45128163G5-A75-9JF PD45128163G5-A80-9JF PD45128163G5-A10-9JF PD45128163G5-A75L-9JF PD45128163G5-A80L-9JF 2 Organization Clock frequency bit bank) MHz (MAX 133 133 125 100 133 125 Data Sheet E0344N10 (Ver. 1.0) PD45128163 Package 54-pin Plastic TSOP (II) ...

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Part Number [ x16 ] PD45128163G5 - A75L NEC Memory Synchronous DRAM Memory density 128 : 128M bits Organization 16 : x16 Number of banks banks, LVTTL Data Sheet E0344N10 (Ver. 1.0) PD45128163 Low Power Minimum cycle ...

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Pin Configurations /xxx indicates active low signal DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 V CC LDQM /WE /CAS /RAS /CS BA0(A13) BA1(A12) A10 A0 ...

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Block Diagram CLK Clock Generator CKE Address Mode Register /CS /RAS /CAS /WE Bank D Bank C Bank B Row Address Buffer & Refresh Bank A Counter Sense Amplifier Column Decoder & Column Latch Circuit Address Buffer & Burst Data ...

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Input / Output Pin Function ............................................................................................................. 8 2. Commands ........................................................................................................................................ 9 3. Simplified State Diagram ................................................................................................................ 12 4. Truth Table ...................................................................................................................................... 13 4.1 Command Truth Table............................................................................................................................ 13 4.2 DQM Truth Table ..................................................................................................................................... 13 4.3 CKE Truth Table...................................................................................................................................... 13 4.4 ...

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Electrical Specifications ................................................................................................................. 32 13.1 AC Parameters for Read Timing ........................................................................................................ 37 13.2 AC Parameters for Write Timing ........................................................................................................ 39 13.3 Relationship between Frequency and Latency ................................................................................ 40 13.4 Mode Register Set ............................................................................................................................... 41 13.5 Power on Sequence and ...

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Input / Output Pin Function Pin name Input / Output CLK Input CLK is the master clock input. Other inputs signals are referenced to the CLK rising edge. CKE Input CKE determine validity of the next CLK (clock). If ...

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Commands Mode register set command (/CS, /RAS, /CAS, /WE = Low) The PD45128xxx has a mode register that defines how the device operates. In this command, A0 through A11, BA0(A13) and BA1(A12) are the data input pins. After power ...

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Write command (/CS, /CAS, /WE = Low, /RAS = High) If the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. The first ...

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Self refresh entry command (/CS, /RAS, /CAS, CKE = Low, /WE = High) After the command execution, self refresh operation continues while CKE remains low. When CKE goes high, the PD45128xxx exits the self refresh mode. During self refresh mode, ...

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Simplified State Diagram 12 Data Sheet E0344N10 (Ver. 1.0) PD45128163 ...

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Truth Table 4.1 Command Truth Table Function Symbol Device deselect DESL No operation NOP Burst stop BST Read READ Read with auto precharge READA Write WRIT Write with auto precharge WRITA Bank activate ACT Precharge select bank PRE Precharge ...

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Note1 4.4 Operative Command Table Current state /CS /RAS /CAS /WE Idle ...

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Current state /CS /RAS /CAS /WE Read with auto H precharge Write with auto H precharge ...

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Current state /CS /RAS /CAS /WE Write recovering Write recovering H with auto precharge L ...

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Command Truth Table for CKE Current State CKE /CS /RAS /CAS /WE n – Self refresh Self refresh recovery ...

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Initialization The synchronous DRAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 100 s or longer pause must precede any signal toggling. (2) After the pause, all ...

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Programming the Mode Register The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0(A13) and BA1(A12) as data inputs. The register retains data until it is reprogrammed or the device loses ...

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Mode Register BA0 BA1 (A13) (A12) A11 A10 BA0 BA1 (A13) (A12) A11 A10 BA0 BA1 (A13) ...

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Burst Length and Sequence [Burst of Two] Starting address Sequential addressing sequence (column address A0, binary [Burst of Four] Starting address Sequential addressing sequence (column address A1 - A0, binary [Burst of Eight] ...

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Address Bits of Bank-Select and Precharge Row (Activate command (Precharge command) Col (/CAS strobes) 22 BA1 BA0 BA1(A12) ...

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Precharge The precharge command can be issued anytime after t Soon after the precharge command is issued, precharge operation performed and the synchronous DRAM enters the idle state after t is satisfied. The parameter t RP The earliest timing ...

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Auto Precharge During a read or write command cycle, A10 controls whether auto precharge is selected. A10 high in the Read or Write command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected ...

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Write with Auto Precharge During a write cycle, the auto precharge starts at the timing that is equal to the value of the t data word input to the device CLK /CAS latency = 2 Command WRITA ...

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Read / Write Command Interval 11.1 Read to Read Command Interval During a read cycle, when new Read command is issued, it will be effective after /CAS latency, even if the previous read operation does not completed. READ will ...

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Write to Read Command Interval Write command and Read command interval is also 1 cycle. Only the write data before Read command will be written. The data bus must be Hi-Z at least one cycle prior to the first ...

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Read to Write Command Interval During a read cycle, READ can be interrupted by WRITE. The Read and Write command interval is 1 cycle minimum. There is a restriction to avoid data conflict. The Data bus must be Hi-Z ...

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Burst Termination There are two methods to terminate a burst operation other than using a Read or a Write command. One is the burst stop command and the other is the precharge command. 12.1 Burst Stop Command During a ...

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Precharge Termination 12.2.1 Precharge Termination in READ Cycle During a read cycle, the burst read operation is terminated by a precharge command. When the precharge command is issued, the burst read operation is terminated and precharge starts. The same ...

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Precharge Termination in WRITE Cycle During a write cycle, the burst write operation is terminated by a precharge command. When the precharge command is issued, the burst write operation is terminated and precharge starts. The same bank can be ...

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Electrical Specifications All voltages are referenced to V (GND). SS After power up, wait more than 100 s and then, execute Power on sequence and CBR (auto) Refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Voltage ...

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DC Characteristics 1 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Operating current I Burst length = 1, CC1 t RC One bank active Precharge standby current I P CKE CC2 in power down mode I PS CKE CC2 Precharge ...

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DC Characteristics 2 (Recommended Operating Conditions unless otherwise noted) Parameter Symbol Input leakage current (L) All other pins not under test = 0 V Output leakage current (L) High level output voltage V I ...

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Synchronous Characteristics Parameter Clock cycle time /CAS latency = 3 /CAS latency = 2 Access time from CLK /CAS latency = 3 /CAS latency = 2 CLK high level width CLK low level width Data-out hold time Data-out low-impedance time ...

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Asynchronous Characteristics Parameter ACT to REF/ACT command period (operation) REF to REF/ACT command period (refresh) ACT to PRE command period PRE to ACT command period Delay time ACT to READ/WRITE command ACT (one) to ACT (another) command period Data-in to ...

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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM L L UDQM Hi RCD Activate Read ...

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CLK CKE CKS CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM L UDQM L Hi RCD t ...

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CLK CKE t CKS t t CMS CMH /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM L UDQM Hi RCD t ...

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Relationship between Frequency and Latency Speed version Clock cycle time [ns] Frequency [MHz] /CAS latency [t ] RCD /RAS latency (/CAS latency + [t ]) RCD [ RC1 [t ] RAS [t ] RRD [t ...

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CLK CKE H t RSC 2 CLK (MIN.) /CS /RAS /CAS /WE BA0 BA1 A10 ADDRESS KEY ADD LDQM UDQM Hi-Z DQ Precharge Mode Activate All Banks Register Set Command Command Command is ...

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CLK Clock cycle is necessary CKE t RSC High level is necessary /CS /RAS /CAS /WE BA0 BA1 A10 ADDRESS KEY ADD LDQM UDQM High level is necessary Hi-Z DQ Precharge Mode CBR (Auto) All Banks Register Set Refresh Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 L BA1 L A10 RAa ADD RAa CAa LDQM L L UDQM Hi-Z DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command SUSPENDED for Bank A for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank T10 ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK 2-CLOCK Command Command SUSPENDED SUSPENDED for Bank A for ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ DAa1 DAa2 Activate Write 1-CLOCK Command Command SUSPENDED for Bank A for Bank A T6 ...

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CLK t CKSP CKE /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Power Down ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM L UDQM L Hi-Z DQ Precharge CBR (Auto) Refresh Command (if necessary RC1 ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM L UDQM L Hi-Z DQ Precharge Self Refresh Command Entry (if necessary ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z QAa1 QAa2 DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa LDQM L UDQM L Hi-Z DDa1 DDa2 DDa3 DDa4 DQ Activate Write Command Command for Bank D for Bank D ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa LDQM L UDQM L Hi-Z DQ DDa1 DDa2 DDa3 DDa4 Activate Write Command Command for Bank D for Bank D ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RDa ADD RDa CDa LDQM L UDQM L Hi-Z QDa1 QDa2 QDa3 QDa4 QDa5 QDa6 QDa7 QDa8 QBa1 QBa2 QBa3 QBa4 QBa5 DQ ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RBa ADD RBa CBa L LDQM UDQM L Hi-Z DQ Activate Read Command Command for Bank B for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L L UDQM Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa L LDQM UDQM L Hi-Z DAa1 DAa2 DAa3 DAa4 DQ Activate Write Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L Hi-Z DQ QAa1 QAa2 (lower) Hi-Z QAa1 QAa2 DQ (Upper) Activate Read Command Command for ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa ADD RAa CAa LDQM L UDQM L DQ Hi-Z QAa1 QAa2 (lower) Hi-Z DQ QAa1 QAa2 (upper) Activate Read Command Command for ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z Aa1 Aa2 DQ Activate Read Command Command for Bank A for Bank A ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z DQ Activate Read Command Command for Bank A for Bank A Activate ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa LDQM L UDQM L Hi-Z Aa1 Aa2 Aa3 Aa4 DQ Activate Write Activate Command Command Command Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RBa ADD RAa CAa RBa LDQM L UDQM L Hi-Z Aa1 Aa2 Aa3 DQ Activate Write Command Command for Bank A for ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z DQ Activate Activate Command Command Read Read with for Bank A for ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Read ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 RAa RDa A10 ADD RAa CAa RDa CDa LDQM L UDQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa RAa CAa RDa ADD LDQM L UDQM L Hi-Z DQ Activate Activate Command Command for Bank A for Bank D Write ...

Page 69

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z Aa Aa+1 DQ Activate Read Activate Command Command Command for Bank A ...

Page 70

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa L LDQM L UDQM Hi-Z DQ Activate Read Activate Command Command Command for Bank A for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L UDQM L Hi-Z Aa Aa+1 Aa+2 Aa+m-1 DQ Aa+m-2 Activate Write Activate Command Command Command ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa CAa RDa LDQM L L UDQM Hi-Z Aa Aa+1 Aa+2 Aa+3 DQ Activate Write Activate Command Command Command for ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Byte Command Command not Read for Bank D for Bank ...

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CLK CKE /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ (lower) DQ (upper) Activate Read Upper Command Command Byte for Bank D for Bank D not Read ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM DQ Hi-Z (lower) Qa1 Qa2 DQ Hi-Z (upper) Qa1 Qa2 Activate Read Command Command for Bank D for Bank D ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 ADD LDQM UDQM Hi-Z DQ Qa1 (lower) Hi-Z DQ Qa1 (upper) Activate Read Command Command for Bank D for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb LDQM L UDQM L Hi-Z DQ QAa1 QDa1 QAb1 QAb2 QDb1 QDb2 QAc1 Activate Activate ...

Page 78

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb LDQM L UDQM L Hi-Z DQ Activate Activate Command Command for Bank D for Bank ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb LDQM L UDQM L DQ Hi-Z DAa1 DDa1 DAb1 DAb2 (lower) DQ Hi-Z DAa1 ...

Page 80

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RDa ADD RAa RDa CAa CDa CAb LDQM L UDQM L DQ Hi-Z DAa1 DDa1 DAb1 DAb2 (lower) DQ Hi-Z DAa1 ...

Page 81

CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RAa CAa ADD LDQM L UDQM L Write Masking Hi-Z DQ DAa1 DAa2 DAa3 DAa4 DAa5 (lower) DQ Hi-Z (upper) DAa1 ...

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CLK CKE H /CS /RAS /CAS /WE BA0 BA1 A10 RAa RAa CAa ADD L LDQM L UDQM Write Masking Hi-Z DQ DAa1 DAa2 DAa3 DAa4 DAa5 (lower) DQ Hi-Z DAa1 DAa2 ...

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Package Drawing 54-pin Plastic TSOP (II) 22.22 ± 0. PIN 0.80 0.25 to 0.40 0. 0.91 max. 0. Note: Dimension "A" does not include mold flash, protrusions or gate burrs. Mold ...

Page 84

Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the PD45128xxx. Type of Surface Mount Device PD45128xxxG5 : 54-pin Plastic TSOP (II) 84 Data Sheet E0344N10 (Ver. 1.0) PD45128163 ...

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NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop ...

Page 86

The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without ...

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