UPD5702 CEL [California Eastern Labs], UPD5702 Datasheet

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UPD5702

Manufacturer Part Number
UPD5702
Description
NECs 2.4 GHz Si LD MOS POWER AMPLIFIER
Manufacturer
CEL [California Eastern Labs]
Datasheet
1.UPD5702.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPD5702TU-E2
Manufacturer:
SILICON
Quantity:
1 000
Company:
Allchip Electronic(HK) Limited Allchip Electronic(HK) Limited
Part Number:
UPD5702TU-E2
Manufacturer:
NEC
Quantity:
3 779
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as
a power amplifier up to 2.4 GHz application. This IC consists of
two stage amplifiers. The device is packaged in a low cost,
surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-
age. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
FEATURES
• MEDIUM OUTPUT POWER:
• ON CHIP OUTPUT POWER CONTROL FUNCTION
• SINGLE SUPPLY VOLTAGE:
• PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
ELECTRICAL CHARACTERISTICS
SYMBOLS
P
V
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
Padj1
Padj2
OBW
P
ISOL
ORL
OUT
DS
PAE
V
IRL
I
OUT
DS
GS
= 3.0 V TYP
= +21 dBm TYP @P
Circuit Current, P
Gate Bias Voltage, P
Output Power, P
Power Added Efficiency, P
Adjacent Channel Power 1, P
Adjacent Channel Power 2, P
Input Return Loss, P
Output Return Loss, P
Isolation, P
Occupied Bandwidth, P
PARAMETERS AND CONDITIONS
IN
= -20 dBm
IN
IN
IN
= -2 dBm, f = 2.45 GHz
= -5 dBm
Si LD MOS POWER AMPLIFIER
= -5 dBm, P
IN
IN
IN
= -20 dBm
= -5 dBm, P
IN
= -20 dBm
= -5 dBm, P
IN
PART NUMBER
IN
IN
= -5 dBm, P
OUT
= -5 dBm, P
= -5 dBm, P
OUT
= +20.5 dBm
(T
OUT
= +20.5 dBm
A
OUT
= 25°C, V
= +20.5 dBm
OUT
OUT
= +20.5 dBm
= +20.5 dBm
= +20.5 dBm
DS
= 3.0 V, f = 1.9 GHz, unless otherwise specified)
NEC's 2.4 GHz
INTERNAL BLOCK DIAGRAM
APPLICATIONS
• 1.9 GHZ Application Ex. PHS etc.
• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.
• General purpose medium power AGC amplifier
Pout2
Pout2
GND
Pin1
1
4
2
3
California Eastern Laboratories
UNITS
dBm
dBc
dBc
mA
dB
dB
dB
dB
%
V
20.5
MIN
UPD5702TU
UPD5702TU
TBD
TYP
150
2.0
-61
-76
27
10
10
45
8
5
7
6
Pin2
Pin2
Pout1
GND
MAX

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UPD5702 Summary of contents

Page 1

... PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack- age ...

Page 2

... UNITS RATINGS SYMBOLS 0.866 P IN -40 to +85 ° -65 to +150 °C dBm +10 +150 °C ORDERING INFORMATION UPD5702TU-E2 25° 1.9 GHz - 3 2 1.90 GHz -30 -40 -50 -60 -70 - PARAMETERS UNITS MIN TYP MAX Supply Voltage 1 ...

Page 3

PACKAGE DIMENSIONS (Units in mm) Top View 0.1 Side View Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result ...

Page 4

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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