GT60M323_06 TOSHIBA [Toshiba Semiconductor], GT60M323_06 Datasheet
GT60M323_06
Manufacturer Part Number
GT60M323_06
Description
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.GT60M323_06.pdf
(6 pages)
Voltage Resonance Inverter Switching Application
•
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Equivalent Circuit
Enhancement mode type
High speed
Low saturation voltage : V
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
Pulsed collector current
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance (IGBT)
Thermal resistance (diode)
Gate
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Collector
Emitter
@ Tc = 100°C
@ Tc = 25°C
DC
Pulsed
@ Tc = 100°C
@ Tc = 25°C
: t
f
CE (sat)
= 0.09 μs (typ.) (I
= 2.3 V (typ.) (I
(Ta = 25°C)
Symbol
Symbol
R
R
GT60M323
V
V
T
th (j-c)
th (j-c)
I
I
P
GES
CES
I
CP
I
FP
T
stg
C
F
C
j
C
= 60 A)
−55 to 150
C
Marking
Rating
0.625
= 60 A)
Max
900
±25
120
120
200
150
4.0
31
60
15
80
1
°C/W
°C/W
Unit
Unit
°C
°C
W
GT60M323
V
V
A
A
A
TOSHIBA
JAPAN
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2-21F2C
GT60M323
2006-11-01
―
―
Unit: mm
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GT60M323_06 Summary of contents
Page 1
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed : t = 0.09 μs (typ • Low saturation voltage : V CE (sat) • FRD included ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Note 1: Switching time measurement circuit and ...
Page 3
I – 120 10 Common 9 emitter 15 8 100 Tc = -40° Collector-emitter voltage V CE (V) I – ...
Page 4
– 200 Common emitter 2.5 Ω 25°C 150 100 150 V 50 100 120 180 Gate charge Q G (nC) Switching ...
Page 5
I max – Common emitter 100 125 Tc Case temperature (°C) I – 100 Common collector ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...