FDN302 FAIRCHILD [Fairchild Semiconductor], FDN302 Datasheet
FDN302
Manufacturer Part Number
FDN302
Description
P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDN302.pdf
(5 pages)
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FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
2000 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
Power management
Load switch
Battery protection
, T
JA
JC
Device Marking
STG
SuperSOT -3
302
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
– Continuous
– Pulsed
G
FDN302P
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–20 V, –2.4 A.
Fast switching speed
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–
8mm
R
R
Ratings
55 to +150
DS(ON)
DS(ON)
–
0.46
–
–
250
0.5
75
2.4
12
20
10
D
= 0.055
= 0.080
DS(ON)
S
October 2000
@ V
@ V
and 30% higher
GS
GS
FDN302P Rev C(W)
3000 units
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C
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FDN302 Summary of contents
Page 1
... Reel Size 7’’ October 2000 R = 0.055 @ V = –4.5 V DS(ON 0.080 @ V = –2.5 V DS(ON provides low R and 30% higher DS(ON Ratings Units V – – 2.4 – 10 0.5 W 0.46 – +150 250 C/W 75 C/W Tape width Quantity 8mm 3000 units FDN302P Rev C(W) ...
Page 2
... Min Typ Max Units –20 V –12 mV/ C –1 A 100 nA –100 nA –0.6 –1.0 –1 mV – 882 pF 211 pF 112 –0.42 A –0.7 –1.2 V FDN302P Rev C(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDN302P Rev C( 1.2 ...
Page 4
... RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 270°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 1000 FDN302P Rev C(W) 12 ...
Page 5
TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...