FDN304P_01 FAIRCHILD [Fairchild Semiconductor], FDN304P_01 Datasheet
FDN304P_01
Manufacturer Part Number
FDN304P_01
Description
P-Channel 1.8V Specified PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDN304P_01.pdf
(5 pages)
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
SuperSOT -3
304
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
1.8V
D
TM
specified
G
– Continuous
– Pulsed
FDN304P
Device
Parameter
MOSFET
S
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–2.4 A, –20 V.
Fast switching speed
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–2.4
0.46
–20
–10
250
0.5
75
D
8
= 52 m @ V
= 70 m @ V
= 100 m @ V
S
DS(ON)
January 2001
and 30% higher
GS
GS
GS
3000 units
FDN304P Rev C(W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C
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FDN304P_01 Summary of contents
Page 1
FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection SuperSOT -3 Absolute ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -4.5V GS -2.5V -3.0V 12 -2.0V 9 -1. 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -2. -4.5V GS ...
Page 4
Typical Characteristics -2. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R DS(ON) 10 100ms 1 1s 10s V =-4.5V ...
Page 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ 2 ...