apm4568j Anpec Electronics Corporation, apm4568j Datasheet - Page 2

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apm4568j

Manufacturer Part Number
apm4568j
Description
Dual Enhancement Mode Mosfet N-and P-channel
Manufacturer
Anpec Electronics Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
apm4568jC-TUG
Manufacturer:
SAMSUNG
Quantity:
1 240
Note:
APM4568J
Absolute Maximum Ratings
Electrical Characteristics
Copyright
Rev. B.1 - May., 2006
Static Characteristics
Symbol
R
BV
V
DS(ON)
Symbol
I
I
GS(th)
DSS
GSS
R
V
V
T
I
DSS
P
I
DM
I
T
DSS
GSS
STG
D
S
*Surface Mounted on 1in
D
JA
*
J
*
*
*
a
*
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-State
Resistance
ANPEC Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance-Junction to Ambient
Parameter
2
pad area, t
Parameter
V
V
V
V
V
V
V
V
V
V
V
V
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
GS
=0V, I
=0V, I
=32V, V
=-32V, V
=V
=V
=±20V, V
=±20V, V
=10V, I
=-10V, I
=4.5V, I
=-4.5V, I
10sec.
GS
GS
, I
, I
(T
Test Condition
DS
DS
DS
DS
A
DS
DS
=250 A
=-250 A
GS
DS
DS
(T
= 25 C unless otherwise noted)
GS
=250 A
=-250 A
=7.5A
DS
DS
T
T
V
V
=5A
=-6A
=0V
=-4A
2
A
=0V
A
A
GS
GS
=0V
=0V
=25°C
=100°C
= 25 C unless otherwise noted)
T
T
=10V (N)
=-10V (P)
J
J
=85°C
=85°C
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
N Channel
±20
7.5
2.8
40
30
-1.3
-40
1.3
Min.
-55 to 150
40
150
2.5
APM4568J
50
1
P Channel
-1.9
21
36
30
50
Typ. Max.
2
±20
-2.8
-40
-20
-6
www.anpec.com.tw
±100
±100
-2.5
-30
2.5
30
29
50
44
70
-1
1
°C/W
Unit
°C
W
Unit
V
A
A
m
nA
V
V
A

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