FDB6670AS_NL FAIRCHILD [Fairchild Semiconductor], FDB6670AS_NL Datasheet

no-image

FDB6670AS_NL

Manufacturer Part Number
FDB6670AS_NL
Description
30V N-Channel PowerTrench SyncFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDB6670AS_NL.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDB6670AS_NL
Manufacturer:
FAIRCHILD
Quantity:
12 500
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
©2005 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
θJC
θJA
, T
G
Device Marking
FDB6670AS
FDB6670AS
FDP6670AS
FDP6670AS
STG
D
S
and low gate charge.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
This 30V MOSFET is designed to
FDB6670AS_NL
FDP6670AS_NL
– Continuous
– Pulsed
FDB6670AS
FDP6670AS
TO-220
FDP Series
Device
The performance of
Parameter
The FDP6670AS
C
(Note 3)
(Note 4)
= 25°C
®
G
SyncFET
T
Derate above 25°C
A
=25
S
o
C unless otherwise noted
Reel Size
Tube
Tube
13’’
13’’
(Note 1)
™
Features
• 31 A, 30 V.
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
• High performance trench technology for extremely
• High power and current handling capability
TO-263AB
FDB Series
D
low R
DS(ON)
and fast switching
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
24mm
24mm
Ratings
n/a
n/a
62.5
62.5
±20
150
275
0.5
2.1
30
62
= 8.5 mΩ @ V
= 10.5 mΩ @ V
G
FDP6670AS/FDB6670AS Rev A(X)
January 2005
D
S
GS
GS
= 10 V
Quantity
800 units
800 units
= 4.5 V
45
45
Units
W/°C
°C/W
°C/W
°C
°C
W
V
V
A

Related parts for FDB6670AS_NL

Image
Part Number
Description
Manufacturer
Datasheet
Request R
FDB6670
Part Number:
FDB6670
Description:
Manufacturer:
Fairchild Semiconductor
FTP5027RTU
Part Number:
FTP5027RTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FTP5021OTU
Part Number:
FTP5021OTU
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
FSB117H
Part Number:
FSB117H
Description:
The FSB117H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
FSB147H
Part Number:
FSB147H
Description:
The FSB147H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB147H.pdf (18 pages)
FSB127H
Part Number:
FSB127H
Description:
The FSB127H is a next-generation, green-mode Fairchild Power Switch (FPS™) incorporating Fairchild’s innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling conformance to all worldwide Standby Mode
Manufacturer:
Fairchild Semiconductor
Datasheet:
FSB117H.pdf (18 pages)
SM2G50US60
Part Number:
SM2G50US60
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
SM2G50US60.pdf (10 pages)
FDMS86300DC
Part Number:
FDMS86300DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86300DC.pdf (8 pages)
FDMS3006SDC
Part Number:
FDMS3006SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3006SDC.pdf (9 pages)
FDMS3008SDC
Part Number:
FDMS3008SDC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3008SDC.pdf (9 pages)
FDMS3016DC
Part Number:
FDMS3016DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS3016DC.pdf (8 pages)
FDMS86101DC
Part Number:
FDMS86101DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86101DC.pdf (8 pages)
FDD86113LZ
Part Number:
FDD86113LZ
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDD86113LZ.pdf (6 pages)
FDMS86500DC
Part Number:
FDMS86500DC
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS86500DC.pdf (8 pages)
FDMS8558S
Part Number:
FDMS8558S
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDMS8558S.pdf (8 pages)

FDB6670AS_NL Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA Package Marking and Ordering Information Device Marking Device FDB6670AS FDB6670AS FDB6670AS FDB6670AS_NL FDP6670AS FDP6670AS FDP6670AS FDP6670AS_NL ©2005 Fairchild Semiconductor Corporation ® ™ SyncFET Features • • Includes SyncFET Schottky body diode • ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2. See “SyncFET Schottky body diode characteristics” below. 3. FDB6670AS_NL is a lead free product. The FDB6670AS_NL marking will appear on the reel label. 4. FDP6670AS_NL is a lead free product. The FDP6670AS_NL marking will appear on the reel label. ...

Page 3

Typical Characteristics 150 V = 10V 4.5V GS 6.0V 5.0V 120 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 31A 10V GS 1.4 1.2 1 ...

Page 4

Typical Characteristics (continued 31A 10V DS 6 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 1000 R LIMIT DS(ON) 100 10s DC ...

Page 5

Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDP6670AS. TIME: 12.5ns/div Figure ...

Page 6

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ ...

Related keywords