FDB66N15TM FAIRCHILD [Fairchild Semiconductor], FDB66N15TM Datasheet
FDB66N15TM
Manufacturer Part Number
FDB66N15TM
Description
150V N-Channel MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDB66N15TM.pdf
(8 pages)
Available stocks
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Part Number
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Company:
Part Number:
FDB66N15TM
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2005 Fairchild Semiconductor Corporation
FDB66N15 Rev A
FDB66N15
150V N-Channel MOSFET
Features
• 66A, 150V, R
• Low gate charge ( typical 49 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
rss
( typical 78.5 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.036Ω @V
G
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
D
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
G
--
--
--
FDB66N15
-55 to +150
1240
41.8
35.7
2.86
150
264
±30
357
300
4.5
66
66
S
D
UniFET
Max.
0.35
62.5
40
September 2005
www.fairchildsemi.com
Unit
W/°C
V/ns
mJ
mJ
Unit
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
TM
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