RJK0301DPB-00-J0 RENESAS [Renesas Technology Corp], RJK0301DPB-00-J0 Datasheet

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RJK0301DPB-00-J0

Manufacturer Part Number
RJK0301DPB-00-J0
Description
Silicon N Channel Power MOS FET Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK0301DPB-00-J0
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RJK0301DPB
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.9.00 Apr 19, 2006 page 1 of 6
High speed switching
Capable of 4.5V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25 C, Rg
3. Tc = 25 C
= 2.3 m typ. (at V
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
10 s, duty cycle
Item
GS
= 10 V)
1%
50
5
1 2
I
3 4
D(pulse)
E
Pch
Symbol
I
AP
AR
V
V
Tstg
Tch
ch-C
I
DSS
GSS
I
DR
Note 2
D
Note 2
Note3
Note1
G
4
–55 to +150
S S S
D
1 2 3
5
+16/ –12
Ratings
1.93
240
150
30
60
60
30
90
65
1, 2, 3
4
5
REJ03G1338-0900
Source
Gate
Drain
Apr 19, 2006
Unit
C/W
mJ
W
V
V
A
A
A
A
(Ta = 25°C)
C
C
Rev.9.00

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RJK0301DPB-00-J0 Summary of contents

Page 1

... RJK0301DPB Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance R = 2.3 m typ. ( DS(on) GS Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) Absolute Maximum Ratings Item Drain to source voltage ...

Page 2

... RJK0301DPB Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge ...

Page 3

... RJK0301DPB Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 100 4 Pulse Test Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 150 100 Gate to Source Voltage Rev.9.00 Apr 19, 2006 page ...

Page 4

... RJK0301DPB Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 4 – Case Temperature Dynamic Input Characteristics Gate Charge Maximum Avalanche Energy vs. ...

Page 5

... RJK0301DPB 0.3 0.5 0.1 0.03 0.01 10 µ Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.9.00 Apr 19, 2006 page Normalized Transient Thermal Impedance vs. Pulse Width θch – c (t) = γ s (t) • θch – c θch – 1.92°C/ 25°C P 100 µ ...

Page 6

... RENESAS Code LFPAK SC-100 PTZZ0005DA-A 1 Ordering Information Part Name RJK0301DPB-00-J0 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.9.00 Apr 19, 2006 page Previous Code MASS[Typ.] LFPAKV 0 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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