RJK2006DPE-00-J3 RENESAS [Renesas Technology Corp], RJK2006DPE-00-J3 Datasheet

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RJK2006DPE-00-J3

Manufacturer Part Number
RJK2006DPE-00-J3
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 1 of 7
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
(Package name: LDPAK(L)
Item
RJK2006DPJ
1
2
3
4
: PRSS0004AE-B
LDPAK(S)-(1)
RJK2006DPE
1
2
I
3
I
DR (pulse)
D (pulse)
Pch
Symbol
4
E
I
AP
θch-c
V
V
AR
Tstg
Tch
I
DSS
GSS
I
DR
Note3
D
Note3
Note2
Note1
Note1
: PRSS0004AE-C
LDPAK(S)-(2) )
RJK2006DPF
1
2
–55 to +150
3
4
Ratings
48.6
1.25
200
±30
100
100
100
150
40
40
27
G
REJ03G0512-0200
D
S
°C/W
Nov 19, 2009
Unit
mJ
°C
°C
W
V
V
A
A
A
A
A
(Ta = 25°C)
Rev.2.00
1. Gate
2. Drain
3. Source
4. Drain

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RJK2006DPE-00-J3 Summary of contents

Page 1

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK( RJK2006DPJ Absolute Maximum Ratings Item Drain to Source voltage ...

Page 2

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ...

Page 3

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Main Characteristics Maximum Safe Operation Area 1000 100 10 Operation in this 1 area is limited by R DS(on) 0 25°C 1 shot 0.01 0 Drain to Source Voltage V Typical Transfer Characteristics Pulse Test 75°C 25° Gate to Source Voltage V Static Drain to Source on State Resistance vs ...

Page 4

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Typical Capacitance vs. Drain to Source Voltage 10000 Ta = 25°C 1000 100 MHz Drain to Source Voltage V Reverse Drain Current vs. Source to Drain Voltage (Typical °C 40 Pulse Test 0.4 0.8 1.2 Source to Drain Voltage V REJ03G0512-0200 Rev.2.00 Nov 19, 2009 ...

Page 5

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 μ 100 μ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page θch – c(t) = γs (t) • θch – c θch – 1.25°C/ 25° ...

Page 6

... RJK2006DPJ, RJK2006DPE, RJK2006DPF Package Dimensions • RJK2006DPJ Package Name JEITA Package Code RENESAS Code ⎯ LDPAK(L) PRSS0004AE-A • RJK2006DPE Package Name JEITA Package Code RENESAS Code LDPAK(S)-(1) SC-83 PRSS0004AE-B 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page Previous Code MASS[Typ.] LDPAK(L) / LDPAK(L)V 1.40g 10.2 ± ...

Page 7

... RJK2006DPJ, RJK2006DPE, RJK2006DPF • RJK2006DPF Package Name JEITA Package Code RENESAS Code ⎯ LDPAK(S)-(2) PRSS0004AE-C 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Ordering Information Part No. RJK2006DPE-00-J3 1000 pcs REJ03G0512-0200 Rev.2.00 Nov 19, 2009 Page Previous Code MASS[Typ.] LDPAK(S)-(2) / LDPAK(S)-(2)V 1.35g 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 + 0.2 0.1 – 0.1 1.37 ± 0.2 0.4 ± ...

Page 8

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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