RJK2508DPK-E RENESAS [Renesas Technology Corp], RJK2508DPK-E Datasheet

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RJK2508DPK-E

Manufacturer Part Number
RJK2508DPK-E
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
RJK2508DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.2.00 Feb.10.2005 page 1 of 6
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
PRSS0004ZE-A
(Previous code: TO-3P)
10 s, duty cycle
Item
150 C
1%
G
D
S
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
AP
V
V
AR
Tstg
Tch
ch-c
I
GSS
I
DSS
DR
Note3
D
Note3
Note2
Note1
Note1
1
2
3
–55 to +150
Ratings
0.833
18.0
250
±30
100
100
150
150
50
50
17
1. Gate
2. Drain (Flange)
3. Source
REJ03G0508-0200
Unit
Feb.10.2005
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00

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RJK2508DPK-E Summary of contents

Page 1

... RJK2508DPK Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline PRSS0004ZE-A (Previous code: TO-3P) Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current ...

Page 2

... RJK2508DPK Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 3

... RJK2508DPK Main Characteristics Power vs. Temperature Derating 200 150 100 100 Case Temperature Typical Output Characteristics 100 8.5 V Pulse Test Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage Rev.2.00 Feb.10.2005 page ...

Page 4

... RJK2508DPK Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 0. 0.08 0.04 0 − Case Temperature Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics 400 200 V ...

Page 5

... RJK2508DPK Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test 0.4 0.8 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor 10Ω Vin 10 V Rev.2.00 Feb.10.2005 page ...

Page 6

... RENESAS Code SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name RJK2508DPK-E 30 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Feb.10.2005 page Previous Code MASS[Typ.] TO-3P / TO-3PV 5.0g 4.8 ± ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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