RJK60S5DPE RENESAS [Renesas Technology Corp], RJK60S5DPE Datasheet

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RJK60S5DPE

Manufacturer Part Number
RJK60S5DPE
Description
600V - 20A - SJ MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
RJK60S5DPE
600V - 20A - SJ MOS FET
High Speed Power Switching
Features
• Superjunction MOSFET
• Low on-resistance
• High speed switching
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
R07DS0639EJ0100 Rev.1.00
Apr 23, 2012
R
t
f
DS(on)
= 23 ns typ. (at I
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
= 0.150 Ω typ. (at I
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
Item
D
= 10 A, V
Tc = 25°C
Tc = 100°C
D
1
= 10 A, V
2
GS
3
4
= 10 V, R
GS
= 10 V, Ta = 25°C)
L
= 30 Ω, Rg = 10 Ω, Ta = 25°C)
I
DR (pulse)
I
D (pulse)
Pch
Symbol
E
I
I
I
I
DR
AP
θch-c
D)
D)
V
V
AR
Tstg
Tch
DSS
GSS
Note1
Note1
Note3
Note1
Note3
Note2
Note1
Note1
G
D
S
–55 to +150
+30, −20
Ratings
Preliminary
12.6
1.36
600
125
150
1.0
20
40
20
40
5
1. Gate
2. Drain
3. Source
4. Drain
R07DS0639EJ0100
Datasheet
°C/W
Unit
Apr 23, 2012
mJ
°C
°C
W
V
V
A
A
A
A
A
A
(Ta = 25°C)
Page 1 of 6
Rev.1.00

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RJK60S5DPE Summary of contents

Page 1

... RJK60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching Features • Superjunction MOSFET • Low on-resistance = 0.150 Ω typ. ( DS(on) D • High speed switching typ. ( Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-( ...

Page 2

... RJK60S5DPE Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Gate resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK60S5DPE Main Characteristics Channel Dissipation vs. Case Temperature 150 100 100 Case Temperature Tc (°C) Typical Output Characteristics 125°C Pulse Test Drain to Source Voltage Static Drain to Source on State Resistance vs. Drain Current (Typical 125°C 25° ...

Page 4

... RJK60S5DPE Body-Drain Diode Reverse Recovery Time (Typical) 1000 100 di/dt = 100 A/μ 25° Reverse Drain Current I C Stored Energy (Typical) OSS 100 150 200 Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage (Typical) 100 Ta = 125° ...

Page 5

... RJK60S5DPE Drain to Source Breakdown Voltage vs. Case Temperature (Typical) 800 700 600 500 400 − Case Temperature Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V Avalanche Test Circuit V DS Monitor Rg 100 Ω Vin R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 1.6 1.2 0.8 0 ...

Page 6

... RJK60S5DPE Package Dimension Package Name JEITA Package Code RENESAS Code LDPAK(S)-(1) SC-83 PRSS0004AE-B 10.2 ± 0.3 1.3 ± 0.2 2.54 ± 0.5 Ordering Information Orderable Part Number RJK60S5DPE-00#J3 R07DS0639EJ0100 Rev.1.00 Apr 23, 2012 Previous Code MASS[Typ.] LDPAK(S)-(1) / LDPAK(S)-(1)V 1.30g 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 + 0.2 0.1 – 0.1 1.37 ± 0.2 0.4 ± 0.1 + 0.2 0.86 – 0.1 2.54 ± 0.5 Quantity 1000 pcs ...

Page 7

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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