PSMN004-36B NXP [NXP Semiconductors], PSMN004-36B Datasheet

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PSMN004-36B

Manufacturer Part Number
PSMN004-36B
Description
N-channel TrenchMOS SiliconMAX logic level FET
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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Part Number:
PSMN004-36B
Manufacturer:
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Part Number:
PSMN004-36B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
DSon
GD
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
PSMN004-36B
N-channel TrenchMOS SiliconMAX logic level FET
Rev. 02 — 1 March 2010
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
T
Conditions
see
T
V
T
V
see
V
see
j
mb
mb
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; V
Figure 1
= 25 °C; see
Figure 9
Figure 9
= 5 V; I
= 10 V; I
= 5 V; I
D
D
j
D
and
and
and
= 75 A; V
≤ 175 °C
= 25 A; T
= 25 A; T
GS
Figure 11
3
Figure 2
10
10
= 5 V;
DS
j
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
j
= 25 °C;
= 25 °C;
= 15 V;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
39
3.5
4
Max
36
75
230
-
4
5
Unit
V
A
W
nC
mΩ
mΩ

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PSMN004-36B Summary of contents

Page 1

... PSMN004-36B N-channel TrenchMOS SiliconMAX logic level FET Rev. 02 — 1 March 2010 1. Product profile 1.1 General description SiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... N-channel TrenchMOS SiliconMAX logic level FET Simplified outline [1] SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B Graphic symbol mb G mbb076 © NXP B.V. 2010. All rights reserved. ...

Page 3

... °C; R sup GS j(init) unclamped 03ag42 120 P der (%) 80 40 150 200 Tmb (°C) Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B Min - - -15 - and 3 - Figure -55 -55 - sup = 50 Ω ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN004-36B_2 Product data sheet N-channel TrenchMOS SiliconMAX logic level FET DC 10 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B 03ag44 = 10 μ 100 μ ...

Page 5

... PSMN004-36B_2 Product data sheet N-channel TrenchMOS SiliconMAX logic level FET Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B Min Typ Max - - 0. 03ag43 t p δ = ...

Page 6

... °C; see /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B Min Typ Figure 8 0.5 - Figure Figure 8 1 1 ...

Page 7

... 0.6 0 (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B 80 × > DS(on ( 175 °C 0 −0.2 0.6 1.4 Transfer characteristics: drain current as a function of gate-source voltage; typical values 2 ...

Page 8

... D Fig 10. Normalized drain-source on-state resistance 03ag50 (pF) 120 160 200 Q (nC) G Fig 12. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B 2 a 1.5 1 0.5 0 − factor as a function of junction temperature ...

Page 9

... Product data sheet N-channel TrenchMOS SiliconMAX logic level FET ( 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B 03ag48 = 25 ° 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN004-36B_2 separated from data sheet PSMN004_36P_36B-01. PSMN004_36P_36B-01 20011119 PSMN004-36B_2 Product data sheet ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B © NXP B.V. 2010. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 March 2010 PSMN004-36B Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 1 March 2010 Document identifier: PSMN004-36B_2 ...

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