PSMN015-60PS_11 PHILIPS [NXP Semiconductors], PSMN015-60PS_11 Datasheet - Page 7

• Manufacturer Part Number: PSMN015-60PS_11
• Description: N-channel 60 V 14.8 m? standard level MOSFET
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
Table 6.
PSMN015-60PS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(S)
g
C
2000
1500
1000
fs
500
50
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
2
20
4
…continued
30
6
40
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8
C
C
003aae033
003aae035
V
I
iss
rss
D
GS
(A)
(V)
Conditions
I
I
V
S
S
50
10
GS
= 15 A; V
= 25 A; dI
Rev. 3 — 23 June 2011
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
= 0 V; T
Fig 6.
Fig 8.
= 30 V
R
(m Ω )
N-channel 60 V 14.8 mΩ standard level MOSFET
(A)
DSon
I
D
50
40
30
20
10
50
40
30
20
10
j
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
= 25 °C
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
5
2
T
PSMN015-60PS
j
= 175 ° C
Min
-
-
-
10
4
Typ
0.8
31
28.5
15
T
© NXP B.V. 2011. All rights reserved.
j
V
= 25 ° C
GS
V
003aae032
003aae036
GS
(V)
-
Max
1.2
-
(V)
20
6
Unit
V
ns
nC
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