AO3400L AOSMD [Alpha & Omega Semiconductors], AO3400L Datasheet
AO3400L
Manufacturer Part Number
AO3400L
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO3400L.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO3400L
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3400 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400 is Pb-free
(meets ROHS & Sony 259 specifications). AO3400L
is a Green Product ordering option. AO3400 and
AO3400L are electrically identical.
AO3400
N-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
G
S
B
T
T
T
T
(SOT-23)
Top View
A
A
A
A
TO-236
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
A
A
A
D
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 5.8 A (V
D
S
(V) = 30V
< 28mΩ (V
< 33mΩ (V
< 52mΩ (V
Maximum
-55 to 150
Typ
±12
GS
5.8
4.9
1.4
30
30
65
85
43
1
= 10V)
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
Max
125
90
60
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO3400L Summary of contents
Page 1
... DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical. TO-236 (SOT-23) ...
Page 2
AO3400 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10V (Volts) DS Fig 1: On-Region Characteristics =2. ...
Page 4
AO3400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 0.1s 1.0 1s 10s DC 0.1 ...