AO3401L AOSMD [Alpha & Omega Semiconductors], AO3401L Datasheet

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AO3401L

Manufacturer Part Number
AO3401L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO3401L.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
AO3401L
Manufacturer:
AOS
Quantity:
3 500
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3401 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO3401 is Pb-free
(meets ROHS & Sony 259 specifications). AO3401L
is a Green Product ordering option. AO3401 and
AO3401L are electrically identical.
AO3401
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
G
S
B
T
T
T
T
(SOT-23)
Top View
A
A
A
A
TO-236
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
A
A
A
D
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
G
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -4.2 A (V
(V) = -30V
< 50mΩ (V
< 65mΩ (V
< 120mΩ (V
D
S
Maximum
-55 to 150
-4.2
-3.5
Typ
±12
-30
-30
1.4
65
85
43
GS
1
= -10V)
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Max
125
90
60
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO3401L Summary of contents

Page 1

... DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product AO3401 is Pb-free (meets ROHS & Sony 259 specifications). AO3401L is a Green Product ordering option. AO3401 and AO3401L are electrically identical. TO-236 (SOT-23) ...

Page 2

AO3401 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25.00 -10V -4.5V 20.00 15.00 10.00 5.00 0.00 0.00 1.00 2.00 -V (Volts) DS Fig 1: On-Region Characteristics 120 100 80 V =-2. 0.00 2.00 4.00 -I (A) D Figure ...

Page 4

AO3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited ...

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