AO3403L AOSMD [Alpha & Omega Semiconductors], AO3403L Datasheet
AO3403L
Manufacturer Part Number
AO3403L
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO3403L.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO3403L
Manufacturer:
Alpha
Quantity:
56 000
Part Number:
AO3403L
Manufacturer:
AO
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3403 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3403 is Pb-free
(meets ROHS & Sony 259 specifications). AO3403L
is a Green Product ordering option. AO3403 and
AO3403L are electrically identical.
AO3403
P-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
G
S
B
T
T
T
T
(SOT-23)
Top View
A
A
A
A
TO-236
=25°C
=70°C
=25°C
=70°C
and low gate charge. This
C
A
A
A
D
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
G
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -2.6 A (V
(V) = -30V
< 130mΩ (V
< 180mΩ (V
< 260mΩ (V
D
S
Maximum
-55 to 150
-2.6
-2.2
Typ
±12
100
-30
-20
1.4
70
63
1
GS
= -10V)
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Max
125
90
80
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO3403L Summary of contents
Page 1
... R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. Standard Product AO3403 is Pb-free (meets ROHS & Sony 259 specifications). AO3403L is a Green Product ordering option. AO3403 and AO3403L are electrically identical. TO-236 (SOT-23) ...
Page 2
AO3403 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V (Volts) DS Fig 1: On-Region Characteristics 250 V =-2.5V GS 200 150 100 (A) D Figure 3: On-Resistance ...
Page 4
AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V DS I =-2. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° 10.0 DS(ON) limited 0.1s ...