IPD050N03L INFINEON [Infineon Technologies AG], IPD050N03L Datasheet

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IPD050N03L

Manufacturer Part Number
IPD050N03L
Description
Fast switching MOSFET for SMPS Optimized technology for DC/DC converters
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Part Number:
IPD050N03L G
Manufacturer:
INFINEON
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IPD050N03L G
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INFINEON
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IPD050N03LG
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Part Number:
IPD050N03LGATMA1
Quantity:
15 040
Rev. 1.02
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
®
3 Power-Transistor
IPD050N03L G
PG-TO252-3-11
050N03L
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
IPF050N03L G
PG-TO252-3-23
050N03L
V
V
V
V
T
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
=35 A, R
=50 A, V
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=175 °C
DS
GS
C
C
=24 V,
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
IPS050N03L G
PG-TO251-3-11
050N03L
DS(on),max
IPS050N03L G
IPD050N03L G
Value
350
±20
50
50
50
50
50
60
6
IPU050N03L G
PG-TO251-3-21
050N03L
IPU050N03L G
IPF050N03L G
30
50
5
Unit
A
mJ
kV/µs
V
V
mΩ
A
2008-04-15

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IPD050N03L Summary of contents

Page 1

... I T =25 ° =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max V GS page 1 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L mΩ IPU050N03L G PG-TO251-3-21 050N03L Value Unit 350 kV/µs ± ...

Page 2

... GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Value Unit 68 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 2.2 K 2.2 - 0.1 1 µ ...

Page 3

... V oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Values Unit min. typ. max. - 2400 3200 pF - 920 1200 - 6 3 7.4 - ...

Page 4

... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.1 0. [V] DS page 4 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...

Page 5

... Typ. forward transconductance g =f 150 120 ° [V] GS page 5 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L =25 ° 3 [A] D =25 ° [A] D ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss 1 10 Crss [V] DS page 6 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L =250 µ - 100 140 T [° °C, 98% 25 °C 175 °C 175 °C, 98 ...

Page 7

... Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L =30 A pulsed [nC] gate ...

Page 8

... Package Outline Rev. 1.02 IPD050N03L G IPS050N03L G PG-TO252-3-11 page 8 IPF050N03L G IPU050N03L G 2008-04-15 ...

Page 9

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.02 IPD050N03L G IPS050N03L G PG-TO252-3-23 page 9 IPF050N03L G IPU050N03L G 2008-04-15 ...

Page 10

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.02 IPD050N03L G IPS050N03L G PG-TO251-3-11 page 10 IPF050N03L G IPU050N03L G 2008-04-15 ...

Page 11

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.02 IPD050N03L G IPS050N03L G PG-TO251-3-21 page 11 IPF050N03L G IPU050N03L G 2008-04-15 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 IPD050N03L G IPS050N03L G page 12 IPF050N03L G IPU050N03L G ...

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