NTD3055-094T4 ONSEMI [ON Semiconductor], NTD3055-094T4 Datasheet

no-image

NTD3055-094T4

Manufacturer Part Number
NTD3055-094T4
Description
Power MOSFET 12 A, 60 V
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055-094T4
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTD3055-094T4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD3055-094T4G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
Part Number:
NTD3055-094T4G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NTD3055-094T4G
0
Company:
Part Number:
NTD3055-094T4G
Quantity:
12 500
Company:
Part Number:
NTD3055-094T4G
Quantity:
450
NTD3055−094
Power MOSFET 12 A, 60 V
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 0.5 sq in. pad size.
2. When surface mounted to an FR4 board using the minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
Designed for low voltage, high speed switching applications in
Bridge Circuits
Pb−Free Packages are Available
Lower R
Lower V
Lower and Tighter V
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Semiconductor Components Industries, LLC, 2004
pad size.
Derate above 25 C
Energy − Starting T
(V
I
L(pk)
DD
− Continuous
− Non−Repetitive (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 11 A, V
= 25 Vdc, V
DS(on)
DS(on)
DS
Rating
GS
= 60 Vdc)
J
p
= 10 Vdc, L = 1.0 mH
(T
= 25 C
v10 ms)
A
A
SD
p
J
GS
v10 ms)
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
= 10 MW)
= 25 C
= 25 C (Note 1)
= 25 C (Note 2)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
"20
"30
+175
0.32
3.13
71.4
100
260
2.1
1.5
60
60
12
10
45
48
61
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1 2
1
V
2
(BR)DSS
60 V
3
3
55094
A
Y
W
ORDERING INFORMATION
4
4
http://onsemi.com
G
CASE 369D
CASE 369C
STYLE 2
R
DPAK−3
STYLE 2
DS(on)
DPAK
Device Code
= Assembly Location
= Year
= Work Week
94 mW
N−Channel
Publication Order Number:
D
TYP
S
Gate
Gate
DIAGRAMS
MARKING
1
NTD3055−094/D
1
Drain
Drain
Drain
Drain
4
2
4
2
I
D
12 A
MAX
3
Source
3
Source

Related parts for NTD3055-094T4

NTD3055-094T4 Summary of contents

Page 1

... A N−Channel MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE Gate Drain Source 55094 Device Code A = Assembly Location Y = Year W = Work Week ORDERING INFORMATION Publication Order Number: NTD3055−094/D ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Adc Reverse Recovery Time Reverse Recovery Stored Charge 300 ms, Duty Cycle 3. Pulse Test: Pulse Width 4. Switching characteristics are independent of operating junction temperatures. NTD3055−094 ( unless otherwise noted Vdc 7.0 Vdc 6.0 Adc ...

Page 3

... Figure 3. On−Resistance versus Gate−to−Source Voltage 1 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD3055−094 100 3 GATE− ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD3055−094 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD3055−094 100 d(off d(on ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD3055−094 SAFE OPERATING AREA 100 STARTING JUNCTION TEMPERATURE ( C) J Figure 12. Maximum Avalanche Energy versus ...

Page 7

... Device NTD3055−094 NTD3055−094G NTD3055−094−1 NTD3055−094−1G NTD3055−094T4 NTD3055−094T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD3055−094 Package DPAK DPAK (Pb− ...

Page 8

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD3055−094 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 9

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD3055−094 PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B C NOTES SOLDERING FOOTPRINT* 6 ...

Page 10

... Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD3055−094/D ...

Related keywords