TN0104N3 SUTEX [Supertex, Inc], TN0104N3 Datasheet

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TN0104N3

Manufacturer Part Number
TN0104N3
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
Ordering Information
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
*
MIL visual screening available
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.
Low threshold —1.6V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
BV
BV
40V
40V
DSS
DGS
/
R
(max)
1.8
2.0
DS(ON)
V
(max)
1.6V
1.6V
GS(th)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
(min)
I
2.0A
2.0A
BV
D(ON)
BV
300 C
20V
DGS
DSS
7-31
TN0104N3
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
TO-92
Where *=2-week alpha date code
Product marking for TO-243AA:
Note: See Package Outline section for dimensions.
Order Number / Package
TN1L*
TO-243AA*
G
TO-243AA
TN0104N8
(SOT-89)
D
S
D
Low Threshold
TN0104ND
Die
TO-92
S G D
TN0104
7

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TN0104N3 Summary of contents

Page 1

... N-Channel Enhancement-Mode Vertical DMOS FETs Order Number / Package I D(ON) (min) TO-92 2.0A TN0104N3 2.0A — Product marking for TO-243AA: Where *=2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 0.80A TO-243AA 1.40A * I (continuous) is limited by max rated † Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P A Electrical ...

Page 3

Typical Performance Curves Output Characteristics 3.75 3.0 2.25 1.5 0. (volts) DS Transconductance vs. Drain Current 0. -25V = 25V DS DS 0.60 0.45 0.30 0. 0.5 1.0 1.5 ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS 1.3 1.2 1.1 1.0 0.9 0.8 - Transfer Characteristics 3 25V DS 2.4 1.8 1.2 0 (volts) GS ...

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