SPD02N80C3_08 INFINEON [Infineon Technologies AG], SPD02N80C3_08 Datasheet
SPD02N80C3_08
Related parts for SPD02N80C3_08
SPD02N80C3_08 Summary of contents
Page 1
TM CoolMOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective ...
Page 2
Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous diode forward current 2) Diode pulse current 4) Reverse diode dv /dt Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, reflow ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy 6) related Effective output capacitance, time 7) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge ...
Page 4
Power dissipation =f tot Max. transient thermal impedance Z =f(t ) thJC P parameter 0.2 0.1 0.05 ...
Page 5
Typ. output characteristics =f =150 °C; t =10 µ parameter 2 4 Drain-source on-state resistance =f(T ...
Page 6
Typ. gate charge =f pulsed V GS gate D parameter gate 11 Avalanche energy =f =50 V ...
Page 7
Typ. capacitances C =f MHz Ciss 2 10 Coss 1 10 Crss 100 200 V Rev. 2.9 14 Typ. Coss stored energy = f(V E oss ...
Page 8
Definition of diode switching characteristics Rev. 2.9 page 8 SPD02N80C3 2008-10-15 ...
Page 9
PG-TO252-3: Outline dimensions in mm/inches Rev. 2.9 page 9 SPD02N80C3 2008-10-15 ...
Page 10
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...