IPB12CN10NG INFINEON [Infineon Technologies AG], IPB12CN10NG Datasheet

IPB12CN10NG

Manufacturer Part Number

IPB12CN10NG

Description

Manufacturer

INFINEON [Infineon Technologies AG]

Datasheet

1.IPB12CN10NG.pdf (12 pages)

Current page: 1 of 12
Download datasheet (628Kb)

Rev. 1.02

OptiMOS

Features

• N-channel, normal level

• Excellent gate charge x R

• Very low on-resistance R

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

• Ideal for high-frequency switching and synchronous rectification

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Type

Package

Marking

J-STD20 and JESD22

see figure 3

jmax

=150°C and duty cycle D=0.01 for V

2 Power-Transistor

IPB12CN10N G

PG-TO263-3

12CN10N

=25 °C, unless otherwise specified

DS(on)

product (FOM)

for target application

Symbol Conditions

dv /dt

D,pulse

tot

, T

IPD12CN10N G

PG-TO252-3

12CN10N

stg

<-5V

di /dt =100 A/µs,

j,max

=67 A, R

=67 A, V

page 1

=25 °C

=100 °C

=25 °C

=175 °C

=80 V,

=25

Product Summary

IPI12CN10N G

PG-TO262-3

12CN10N

DS(on),max

IPB12CN10N G

IPI12CN10N G

(TO252)

-55 ... 175

55/175/56

Value

268

154

±20

125

IPP12CN10N G

PG-TO220-3

12CN10N

IPD12CN10N G

IPP12CN10N G

12.4

100

2006-06-02

Unit

kV/µs

°C

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