SPD30P06PG INFINEON [Infineon Technologies AG], SPD30P06PG Datasheet
SPD30P06PG
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SPD30P06PG Summary of contents
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SIPMOS Power-Transistor Features P-Channel · · Enhancement mode Avalanche rated · rated · 175°C operating temperature · ° Pb-free lead plating; RoHS compliat Type Package SPD30P06P G PG-TO252-3 Maximum Ratings, °C, unless otherwise ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain- source breakdown ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ³ DS(on)max D Input capacitance - MHz GS DS Output capacitance V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Gate to source charge Gate to drain charge Gate charge total V = ...
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Power dissipation tot C SPD30P06P 140 W 120 110 100 100 120 140 160 Safe operating area I = ...
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Typ. output characteristic =25° parameter µs p SPD30P06P - 125.00W tot -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 ...
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Drain-source on-state resistance DS(on) j parameter : I = -21 SPD30P06P 0.24 W 0.20 0.18 0.16 0.14 0.12 98% 0.10 typ 0.08 0.06 0.04 0.02 0.00 -60 - Typ. ...
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Avalanche energy para - - 260 mJ 220 200 180 160 140 120 100 ...
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Package outline: PG-TO252-3 Rev 2.3 page 9 SPD30P06P G 2008-09-02 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...