ATP101-TL-H SANYO [Sanyo Semicon Device], ATP101-TL-H Datasheet

no-image

ATP101-TL-H

Manufacturer Part Number
ATP101-TL-H
Description
General-Purpose Switching Device Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
Ordering number : ENA1646A
ATP101
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7057-001
Note : *1 V DD =- -10V, L=200 μ H, I AV =- -13A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Low ON-resistance
Slim package
Halogen free compliance
*2 L ≤ 200 μ H, Single pulse
1
0.8
2.3
6.5
4
Parameter
2
2.3
3
0.6
0.55
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
0.4
1.5
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
E AS
I AV
Symbol
0.4
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
Tc=25°C
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
4.6
2.6
ATP101
ATP101-TL-H
0.4
Large current
4.5V drive
Protection diode in
Conditions
61312 TKIM/12710PA TKIM TC-00002233
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Electrical Connection
1
DATA SHEET
TL
4,2
3
Ratings
--55 to +150
: ATPAK
: -
--30
±20
--25
--75
--13
150
30
25
No.A1646-1/7
Marking
ATP101
LOT No.
Unit
mJ
°C
°C
W
A
A
A
V
V

Related parts for ATP101-TL-H

ATP101-TL-H Summary of contents

Page 1

... SANYO Semiconductors Large current • 4.5V drive • Protection diode in • Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ Tc=25°C Tch Tstg ATP101-TL-H 1.5 4.6 2.6 0.4 0 Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK http://semicon.sanyo.com/en/network DATA SHEET Ratings --30 ±20 --25 --75 30 ...

Page 2

... --13A =1.15Ω D PW=10μs D.C.≤1% G ATP101 P.G 50Ω S Ordering Information Device ATP101-TL-H ATP101 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS V GS =±16V = (off =--10V =--1mA | yfs | V DS =--10V =--13A ...

Page 3

... Drain Current Time -- --15V --10V 100 (on --0.1 --1.0 --10 Drain Current ATP101 -- --10V Single pulse --25 --20 --15 --10 -- --1.5 --2.0 0 --0.5 IT15312 80 Tc=25 ° C Single pulse --13 ...

Page 4

... Total Gate Charge 100 Case Temperature °C ATP101 -75A --100 -25A Operation in 2 this area is limited (on). --1 Tc=25°C Single pulse --0 ...

Page 5

... Taping Specifi cation ATP101-TL-H ATP101 No.A1646-5/7 ...

Page 6

... Outline Drawing ATP101-TL-H ATP101 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No.A1646-6/7 ...

Page 7

... Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords