ATP101-TL-H

Manufacturer Part NumberATP101-TL-H
DescriptionGeneral-Purpose Switching Device Applications
ManufacturerSANYO [Sanyo Semicon Device]
ATP101-TL-H datasheet
 


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Ordering number : ENA1646A
P-Channel Silicon MOSFET
ATP101
General-Purpose Switching Device
Applications
Features
Low ON-resistance
Slim package
Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 V DD =- -10V, L=200 μ H, I AV =- -13A
*2 L ≤ 200 μ H, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
2
0.55
1
3
0.8
0.6
2.3
2.3
ATP101
SANYO Semiconductors
Large current
4.5V drive
Protection diode in
Symbol
Conditions
V DSS
V GSS
I D
I DP
PW≤10μs, duty cycle≤1%
P D
Tc=25°C
Tch
Tstg
E AS
I AV
ATP101-TL-H
1.5
4.6
2.6
0.4
0.4
1 : Gate
0.4
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
http://semicon.sanyo.com/en/network
DATA SHEET
Ratings
--30
±20
--25
--75
30
150
--55 to +150
25
--13
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
TL
Electrical Connection
4,2
1
3
61312 TKIM/12710PA TKIM TC-00002233
Unit
V
V
A
A
W
°C
°C
mJ
A
Marking
ATP101
LOT No.
No.A1646-1/7

ATP101-TL-H Summary of contents

  • Page 1

    ... SANYO Semiconductors Large current • 4.5V drive • Protection diode in • Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ Tc=25°C Tch Tstg ATP101-TL-H 1.5 4.6 2.6 0.4 0 Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK http://semicon.sanyo.com/en/network DATA SHEET Ratings --30 ±20 --25 --75 30 ...

  • Page 2

    ... --13A =1.15Ω D PW=10μs D.C.≤1% G ATP101 P.G 50Ω S Ordering Information Device ATP101-TL-H ATP101 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS V GS =±16V = (off =--10V =--1mA | yfs | V DS =--10V =--13A ...

  • Page 3

    ... Drain Current Time -- --15V --10V 100 (on --0.1 --1.0 --10 Drain Current ATP101 -- --10V Single pulse --25 --20 --15 --10 -- --1.5 --2.0 0 --0.5 IT15312 80 Tc=25 ° C Single pulse --13 ...

  • Page 4

    ... Total Gate Charge 100 Case Temperature °C ATP101 -75A --100 -25A Operation in 2 this area is limited (on). --1 Tc=25°C Single pulse --0 ...

  • Page 5

    ... Taping Specifi cation ATP101-TL-H ATP101 No.A1646-5/7 ...

  • Page 6

    ... Outline Drawing ATP101-TL-H ATP101 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No.A1646-6/7 ...

  • Page 7

    ... Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...