ATP101-TL-H SANYO [Sanyo Semicon Device], ATP101-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP101-TL-H
• Description: General-Purpose Switching Device Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
ATP101-TL-H
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --15V
D
S
I D = --13A
R L =1.15Ω
ATP101
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
V OUT
ATPAK
I D =--1mA, V GS =0V
V DS =--30V, V GS =0V
V GS =±16V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--13A
I D =--13A, V GS =--10V
I D =--7A, V GS =--4.5V
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--25A
I S =--25A, V GS =0V
ATP101
Conditions
3,000pcs./reel
Shipping
min
--1.2
--30
Pb Free and Halogen Free
Ratings
typ
--0.99
memo
18.5
875
220
155
9.2
3.2
4.0
17
23
36
70
80
70
max
--2.6
--1.5
±10
--1
30
51
No.A1646-2/7
Unit
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V