ATP103_12 SANYO [Sanyo Semicon Device], ATP103_12 Datasheet
ATP103_12
Related parts for ATP103_12
ATP103_12 Summary of contents
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Ordering number : ENA1623A P-Channel Silicon MOSFET ATP103 General-Purpose Switching Device Applications Features Low ON-resistance • Slim package • Halogen free compliance • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current ...
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Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall ...
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--55 --50 --45 --40 --35 --30 --25 --20 --15 --10 -- --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain-to-Source Voltage (on ...
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-- --15V --55A --8 --6 --4 -- Total Gate Charge ...
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Taping Specifi cation ATP103-TL-H ATP103 No.A1623-5/7 ...
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Outline Drawing ATP103-TL-H ATP103 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No.A1623-6/7 ...
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Note on usage : Since the ATP103 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", ...