5stp-03x6500 ABB Semiconductors, 5stp-03x6500 Datasheet

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5stp-03x6500

Manufacturer Part Number
5stp-03x6500
Description
Phase Control Thyristor
Manufacturer
ABB Semiconductors
Datasheet
Blocking
Maximum rated values
Characteristic values
V
Mechanical data
Maximum rated values
Characteristic values
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Symbol
V
V
V
dV/dt
Parameter
Forward leakage current
Reverse leakage current
Parameter
Mounting force
Acceleration
Acceleration
Parameter
Weight
Housing thickness
Surface creepage distance
Air strike distance
V
V
I
I
I
V
r
DRM
T(AV)M
T(RMS)
TSM
T
DSM,
DRM,
RSM
DRM
DSM
(T0)
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
/ V
crit
V
V
RSM
RRM
RRM
= 5600
= 6500
= 350
= 550
= 4.5×10
= 1.2
= 2.3
are equal to V
Conditions
f = 5 Hz, t
f = 50 Hz, t
t
Exp. to 3750 V, T
p
= 5 ms, single pulse
1)
1)
p
3
p
= 10 ms
DSM
= 10 ms
/ V
V
V
A
A
A
V
vj
m
RSM
= 125°C
values up to T
Symbol Conditions
I
I
Symbol Conditions
F
a
a
Symbol Conditions
m
H
D
D
DSM
RSM
M
S
a
Phase Control Thyristor
V
V
vj
Device unclamped
Device clamped
F
M
DSM
RSM
= 110°C
= 10 kN, T
5STP 03X6500
, T
, T
vj
vj
= 125°C
= 125°C
5STP 03X6500 5STP 03X6200
a
= 25 °C
6500 V
5600 V
7000 V
min
min
min
34.8
38
21
8
1000 V/µs
6200 V
5300 V
6700 V
typ
typ
typ
10
Doc. No. 5SYA1003-04 Oct. 04
max
max
max
5STP 03X5800
35.4
150
150
100
0.4
12
50
5800 V
4900 V
6300 V
Unit
Unit
Unit
m/s
m/s
mm
mm
mm
mA
mA
kN
kg
2
2

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5stp-03x6500 Summary of contents

Page 1

... Surface creepage distance Air strike distance 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Phase Control Thyristor 5STP 03X6500 5STP 03X6500 5STP 03X6200 6500 V 5600 V 7000 V Symbol Conditions I ...

Page 2

... DRM 125° 1000 A, vj TRM V = 200 / A/µ 0 0.5 µ ° 5STP 03X6500 min typ max Unit 350 A 550 A 3 4.5× 101× 4.85× 98×10 A min typ ...

Page 3

... Double-side cooled F = 8... Single-side cooled F = 8... 3.370 3.100 0.0161 0.0075 Fig. 1 Transient thermal impedance junction-to case. 5STP 03X6500 min typ max Unit see Fig. 9 min typ max Unit 2.6 V 400 mA 0 ...

Page 4

... Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1003-04 Oct. 04 Fig. 3 On-state characteristics. T =125°C, 10ms half sine j Fig. 5 Max. permissible case temperature vs. mean on-state current. 5STP 03X6500 page ...

Page 5

... Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. I 2.. 1.5 I Gon 5... Gon t ) Gon Fig. 9 Max. peak gate power loss. Fig. 11 Peak reverse recovery current vs. decay rate 5STP 03X6500 of on-state current. page ...

Page 6

... Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors 5STP 03X6500 g g Doc. No. 5SYA1003-04 Oct. 04 ...

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