5stp-07d1800 ABB Semiconductors, 5stp-07d1800 Datasheet
5stp-07d1800
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5stp-07d1800 Summary of contents
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... T • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking 5STP 07D1800 5STP 07D1600 5STP 07D1200 Conditions Part Number V V 1800 V DRM RRM V 2000 V RSM1 I ...
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... 25° j 400 25° 5STP 07D1800 = 70° 125°C j 8.3 ms After surge 8.3 ms 1500 A 500 - 1500 125°C j ≤ 0.67⋅ 125° ...
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... Fig. 1 Transient thermal impedance junction to case. Fig. 3 On-state characteristics. 5STP 07D1800 125 °C Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled T =125°C, 10ms half sine j page ...
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... Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA1027-05 Sep. 01 Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. 5STP 07D1800 page ...
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... ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email abbsem@ch.abb.com Internet www.abbsem.com Fig. 9 Max. peak gate power loss. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. 5STP 07D1800 Doc. No. 5SYA1027-05 Sep. 01 ...